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Suntsu Electronics is your reliable source for hard-to-find and obsolete electronic components. Our advanced part search tool makes it easy to quickly find the products you need. You can search by part number, manufacturer, or specifications to instantly access a comprehensive database of electronic components.

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Total Products: 3,054
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
N/A
M12L128324A-5BG2CESMT128Mb SDRAMDRAM Memory90-FBGA3.0V ~ 3.6V0°C – 70°C
Memory Size:
128 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
10 ns
Access Time:
4.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
1M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
90-FBGA
925
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N/A
M12L128324A-6BG2CESMT128Mb SDRAMDRAM Memory90-FBGA3.0V ~ 3.6V0°C – 70°C
Memory Size:
128 Mbit
Clock Frequency:
166 MHz
Write Cycle Time Word Page:
12 ns
Access Time:
5.4 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
1M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
90-FBGA
215
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QUOTE
N/A
M12L128324A-7BG2CESMT128Mb SDRAMDRAM Memory90-FBGA3.0V ~ 3.6V0°C – 70°C
Memory Size:
128 Mbit
Clock Frequency:
143 MHz
Write Cycle Time Word Page:
14 ns
Access Time:
6 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
1M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
90-FBGA
834
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N/A
M12L16161A-5T(2R)ESMT16Mb SDRAM Ind.DRAM Memory50PIN TSOP2.5V-40°C – 85°C
Memory Size:
16 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
10 ns
Access Time:
5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM
Memory Organization:
1M x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
50PIN TSOP
631
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N/A
M12L16161A-5TG2RESMT16Mb SDRAMDRAM Memory50-TSOPII3.0V ~ 3.6V0°C – 70°C
Memory Size:
16 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
10 ns
Access Time:
4.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
512K x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
50-TSOP II
1,206
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QUOTE
N/A
M12L16161A-7T(2R)ESMT16Mb SDRAM Ind.DRAM Memory50PIN TSOP2.5V-40°C – 85°C
Memory Size:
16 Mbit
Clock Frequency:
143 MHz
Write Cycle Time Word Page:
14 ns
Access Time:
5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM
Memory Organization:
1M x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
50PIN TSOP
666
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QUOTE
N/A
M12L16161A-7TG2RESMT16Mb SDRAMDRAM Memory50-TSOPII3.0V ~ 3.6V0°C – 70°C
Memory Size:
16 Mbit
Clock Frequency:
143 MHz
Write Cycle Time Word Page:
14 ns
Access Time:
6 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
512K x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
50-TSOP II
519
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N/A
M12L2561616A-5B(2T)ESMT256Mb SDRAMDRAM Memory54 pin TSOPII/ 54 Ball FBGA2.5V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
10 ns
Access Time:
5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM
Memory Organization:
16M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54 pin TSOPII/ 54 Ball FBGA
54
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QUOTE
N/A
M12L2561616A-5BG2TESMT256Mb SDRAMDRAM MemoryBGA3.0V ~ 3.6V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
10 ns
Access Time:
4.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54-BGA
779
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QUOTE
N/A
M12L2561616A-5T(2T)ESMT256Mb SDRAMDRAM Memory54 pin TSOPII/ 54 Ball FBGA2.5V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
10 ns
Access Time:
5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM
Memory Organization:
16M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54 pin TSOPII/ 54 Ball FBGA
1,431
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QUOTE
N/A
M12L2561616A-5TG2TESMT256Mb SDRAMDRAM MemoryTSOPII3.0V ~ 3.6V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
10 ns
Access Time:
4.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54-TSOP II
217
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QUOTE
N/A
M12L2561616A-6B(2T)ESMT256Mb SDRAMDRAM Memory54 pin TSOPII/ 54 Ball FBGA2.5V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
166 MHz
Write Cycle Time Word Page:
12 ns
Access Time:
5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM
Memory Organization:
16M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54 pin TSOPII/ 54 Ball FBGA
128
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QUOTE
N/A
M12L2561616A-6BG2TESMT256Mb SDRAMDRAM MemoryBGA3.0V ~ 3.6V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
166 MHz
Write Cycle Time Word Page:
12 ns
Access Time:
5.4 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54-BGA
266
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QUOTE
N/A
M12L2561616A-6T(2T)ESMT256Mb SDRAMDRAM Memory54 pin TSOPII/ 54 Ball FBGA2.5V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
166 MHz
Write Cycle Time Word Page:
12 ns
Access Time:
5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM
Memory Organization:
16M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54 pin TSOPII/ 54 Ball FBGA
422
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QUOTE
N/A
M12L2561616A-6TG2TESMT256Mb SDRAMDRAM MemoryTSOPII3.0V ~ 3.6V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
166 MHz
Write Cycle Time Word Page:
12 ns
Access Time:
5.4 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54-TSOP II
1,463
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QUOTE
N/A
M12L2561616A-7B(2T)ESMT256Mb SDRAMDRAM Memory54 pin TSOPII/ 54 Ball FBGA2.5V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
143 MHz
Write Cycle Time Word Page:
14 ns
Access Time:
5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM
Memory Organization:
16M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54 pin TSOPII/ 54 Ball FBGA
785
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QUOTE
N/A
M12L2561616A-7BG2TESMT256Mb SDRAMDRAM MemoryBGA3.0V ~ 3.6V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
143 MHz
Write Cycle Time Word Page:
14 ns
Access Time:
5.4 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54-BGA
854
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QUOTE
N/A
M12L2561616A-7T(2T)ESMT256Mb SDRAMDRAM Memory54 pin TSOPII/ 54 Ball FBGA2.5V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
143 MHz
Write Cycle Time Word Page:
14 ns
Access Time:
5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM
Memory Organization:
16M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54 pin TSOPII/ 54 Ball FBGA
727
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QUOTE
N/A
M12L2561616A-7TG2TESMT256Mb SDRAMDRAM MemoryTSOPII3.0V ~ 3.6V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
143 MHz
Write Cycle Time Word Page:
14 ns
Access Time:
5.4 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54-TSOP II
793
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QUOTE
N/A
M12L5121632A-5B(2T)ESMT512Mb SDRAMDRAM Memory54 pin TSOPII/ 54 Ball FBGA2.5V0°C – 70°C
Memory Size:
512 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
10 ns
Access Time:
5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM
Memory Organization:
32M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54 pin TSOPII/ 54 Ball FBGA
471
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