| N/A | | M56Z4G16256A (2H) | ESMT | 4Gb LPDDR4x SDRAM Ind. | DRAM Memory | 200 Ball BGA | 1.7V ~ 1.95V | -40°C – 85°C | Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 18 ns Technology: DRAM - LPDDR4X Memory Organization: 256M x 16 | 157 | |
| N/A | | M56Z4G16256A2H | ESMT | 4Gb LPDDR4x SDRAM | DRAM Memory | 200 Ball BGA | 1.70V ~ 1.95V | -25°C – 85°C | Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 18 ns Technology: DRAM - LPDDR4X Memory Organization: 256M x 16 | 563 | |
| N/A | N/A | M56Z8G16512A (2H) | ESMT | 8Gb LPDDR4x SDRAM Ind. | DRAM Memory | 200 Ball BGA | 2.5V | -40°C – 85°C | Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 18 ns Memory Organization: 512M x 16 Memory Interface: Parallel | 1,455 | |
| N/A | | M56Z8G32256A | ESMT | 8Gb LPDDR4x SDRAM | DRAM Memory | 200 Ball BGA | 1.70V ~ 1.95V | -25°C – 85°C | Clock Frequency: 1.866 GHz Write Cycle Time Word Page: 18 ns Technology: DRAM - LPDDR4X Memory Organization: 256M x 32 | 1,441 | |
| N/A | | M56Z8G32256A (2H) | ESMT | 8Gb LPDDR4x SDRAM | DRAM Memory | 200 Ball BGA | 1.70V ~ 1.95V | -25°C – 85°C | Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 18 ns Technology: DRAM - LPDDR4X Memory Organization: 256M x 32 | 1,980 | |
| N/A | N/A | MT40A16G4WPF-062H:B TR | Micron Technology Inc. | IC DRAM 64GBIT 1.6GHZ | DRAM Memory | N/A | N/A | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Organization: 16G x 4 Write Cycle Time Word Page: N/A | 1,008 | |
 | N/A | MT40A2G16SKL-062E:B | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 96FBGA | DRAM Memory | 96-FBGA (10.5x13) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 2G x 16 Write Cycle Time Word Page: N/A | 306 | |
 | N/A | MT40A2G16SKL-062E:B TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 96FBGA | DRAM Memory | 96-FBGA (10.5x13) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 2G x 16 Write Cycle Time Word Page: N/A | 695 | |
 | | MT40A2G16TBB-062E:F | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 96FBGA | DRAM Memory | 96-FBGA (7.5x13) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 2G x 16 Write Cycle Time Word Page: N/A | 38 | |
 | | MT40A2G16TBB-062E:F TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 96FBGA | DRAM Memory | 96-FBGA (7.5x13) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 2G x 16 Write Cycle Time Word Page: N/A | 841 | |
 | N/A | MT40A4G8BAF-062E:B | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (10.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 409 | |
 | N/A | MT40A4G8BAF-062E:B TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (10.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 829 | |
 | N/A | MT40A4G8KVA-083H:G | Micron Technology Inc. | IC DRAM 32GBIT PAR 1.2GHZ 78FBGA | DRAM Memory | 78-FBGA (8x12) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 47 | |
 | N/A | MT40A4G8KVA-083H:G TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 1.2GHZ 78FBGA | DRAM Memory | 78-FBGA (8x12) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 190 | |
 | N/A | MT40A4G8NEA-062E:F | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 255 | |
 | | MT40A4G8NEA-062E:F TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 64 | |
 | N/A | MT40A8G4BAF-062E:B | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (10.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 8G x 4 Write Cycle Time Word Page: N/A | 1,166 | |
 | N/A | MT40A8G4BAF-062E:B TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (10.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 8G x 4 Write Cycle Time Word Page: N/A | 1,197 | |
| N/A | N/A | MT40A8G4CLU-062H:E | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 8G x 4 Write Cycle Time Word Page: N/A | 95 | |
| N/A | N/A | MT40A8G4CLU-062H:E TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 8G x 4 Write Cycle Time Word Page: N/A | 1,703 | |