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Electronic Parts Search

Suntsu Electronics is your reliable source for hard-to-find and obsolete electronic components. Our advanced part search tool makes it easy to quickly find the products you need. You can search by part number, manufacturer, or specifications to instantly access a comprehensive database of electronic components.

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Total Products: 400
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
N/A
F50L1G41LB-IP(2M)ESMT1Gb SPI NAND Flash Ind.Flash Memory8-contact WSON2.5V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
900 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SPI NAND
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-contact WSON
47
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N/A
F50L1G41LC (2P)ESMT1Gb SPI NAND Flash Ind.Flash Memory8-contact WSON2.5V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
900 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SPI NAND
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-contact WSON
12
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N/A
F50L1G41XA-IP(2B)ESMT1Gb SPI NAND Flash Ind.Flash Memory8-contact WSON/ 24 Ball BGA2.5V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
600 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SPI NAND
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-contact WSON/ 24 Ball BGA
1,221
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N/A
F50L2G41KA (2V)ESMT2Gb SPI NAND Flash Ind.Flash Memory8-contact WSON2.5V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
600 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SPI NAND
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-contact WSON
723
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N/A
F50L2G41KA2VESMT2Gb SPI NAND Flash Ind.Flash Memory8-contact WSON2.5V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
600 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SPI NAND
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-contact WSON
148
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N/AN/AF50L2G41KB (2P)ESMT2Gb SPI NAND Flash Ind.Flash Memory8-contact WSON2.5V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
600 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SPI NAND Flash
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-contact WSON
628
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N/A
F50L2G41XA-IP(2B)ESMT2Gb SPI NAND Flash Ind.Flash Memory8-contact WSON2.5V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
600 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SPI NAND
Memory Organization:
2G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-contact WSON
1,279
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N/A
F50L2G41XA-IP(2BE)ESMT2Gb SPI NAND Flash Ind.Flash Memory8-contact LGA2.5V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
600 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SPI NAND
Memory Organization:
2G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-contact LGA
240
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QUOTE
N/A
F50L4G41XB-IP(2X)ESMT4Gb SPI NAND Flash Ind.Flash Memory8-contact WSON2.5V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
600 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SPI NAND
Memory Organization:
4G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-contact WSON
947
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N/A
F59D1G161LB-45BG2MESMT1Gb NAND FlashFlash MemoryBGA-631.7V ~ 1.95V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
64M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
63-BGA
695
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N/A
F59D1G161LB-45BIG2MESMT1Gb NAND Flash Ind.Flash MemoryBGA-631.7V ~ 1.95V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
64M x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
254
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N/A
F59D1G161LB-45TG2MESMT1Gb NAND FlashFlash MemoryTSOPI-481.7V ~ 1.95V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
64M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
268
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N/A
F59D1G161LB-45TIG2MESMT1Gb NAND Flash Ind.Flash MemoryTSOPI-481.7V ~ 1.95V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
64M x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
1,121
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N/A
F59D1G161LB-IP(2M)ESMT1Gb NAND Flash Ind.Flash Memory48 pin TSOPI/ 63 Ball BGA2.5V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
1G x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48 pin TSOPI/ 63 Ball BGA
1,733
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N/A
F59D1G161MB-45BG2MESMT1Gb NAND FlashFlash MemoryBGA-631.7V ~ 1.95V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
64M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
63-BGA
793
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QUOTE
N/A
F59D1G161MB-45BIG2MESMT1Gb NAND Flash Ind.Flash MemoryBGA-631.7V ~ 1.95V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
64M x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
229
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N/A
F59D1G161MB-45TG2MESMT1Gb NAND FlashFlash MemoryTSOPI-481.7V ~ 1.95V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
64M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
250
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N/A
F59D1G161MB-45TIG2MESMT1Gb NAND Flash Ind.Flash MemoryTSOPI-481.7V ~ 1.95V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
64M x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
889
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QUOTE
N/A
F59D1G161MB-IP(2M)ESMT1Gb NAND Flash Ind.Flash Memory48 pin TSOPI/ 63 Ball BGA2.5V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48 pin TSOPI/ 63 Ball BGA
164
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N/A
F59D1G81LB-45BCG2MESMT1Gb NAND FlashFlash MemoryBGA-671.7V ~ 1.95V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
67-BGA
242
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