| N/A | | F59D2G81KA-45BIAG2N | ESMT | 2Gb NAND Flash Auto. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 659 | |
| N/A | | F59D2G81KA-45BIG2N | ESMT | 2Gb NAND Flash Ind. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 594 | |
| N/A | | F59D2G81KA-45TG2N | ESMT | 2Gb NAND Flash | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,072 | |
| N/A | | F59D2G81KA-45TIAG2N | ESMT | 2Gb NAND Flash Auto. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 593 | |
| N/A | | F59D2G81KA-45TIG2N | ESMT | 2Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,437 | |
| N/A | | F59D2G81XA-45BG2B | ESMT | 2Gb NAND Flash | Flash Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 543 | |
| N/A | | F59D2G81XA-45BIG2B | ESMT | 2Gb NAND Flash Ind. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 281 | |
| N/A | | F59D2G81XA-45TG2B | ESMT | 2Gb NAND Flash | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 960 | |
| N/A | | F59D2G81XA-45TIG2B | ESMT | 2Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 236 | |
| N/A | | F59D2G81XA-IP(2B) | ESMT | 2Gb NAND Flash Ind. | Flash Memory | 48 Pin TSOPI/ 63 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: SLC NAND Flash Memory Organization: 256M x 8 Memory Interface: Parallel Packaging: 48 Pin TSOPI/ 63 Ball BGA | 882 | |
| N/A | | F59D4G81KA-45BCG2R | ESMT | 4Gb NAND Flash | Flash Memory | BGA-67 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 784 | |
| N/A | | F59D4G81KA-45BCIG2R | ESMT | 4Gb NAND Flash Ind. | Flash Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 416 | |
| N/A | | F59D4G81KA-45BG2R | ESMT | 4Gb NAND Flash | Flash Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,199 | |
| N/A | | F59D4G81KA-45BIG2R | ESMT | 4Gb NAND Flash Ind. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 751 | |
| N/A | | F59D4G81KA-45TG2R | ESMT | 4Gb NAND Flash | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,122 | |
| N/A | | F59D4G81KA-45TIG2R | ESMT | 4Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,068 | |
| N/A | | F59D4G81XB-45BCG2X | ESMT | 4Gb NAND Flash | Flash Memory | BGA-67 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 320 | |
| N/A | | F59D4G81XB-45BCIAG2X | ESMT | 4Gb NAND Flash Auto. | Flash Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 349 | |
| N/A | | F59D4G81XB-45BCIG2X | ESMT | 4Gb NAND Flash Ind. | Flash Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 722 | |
| N/A | | F59D4G81XB-45BG2X | ESMT | 4Gb NAND Flash | Flash Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 544 | |