| N/A | | F59L1G81LB-25BIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,515 | |
| N/A | | F59L1G81LB-25TG2M | ESMT | 1Gb NAND Flash | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 528 | |
| N/A | | F59L1G81LB-25TIAG2M | ESMT | 1Gb NAND Flash Auto. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 836 | |
| N/A | | F59L1G81LB-25TIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,640 | |
| N/A | | F59L1G81LB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Flash Memory | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 1G x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 1,397 | |
| N/A | | F59L1G81MB-25BCG2M | ESMT | 1Gb NAND Flash | Flash Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 223 | |
| N/A | | F59L1G81MB-25BCIAG2M | ESMT | 1Gb NAND Flash Auto. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 349 | |
| N/A | | F59L1G81MB-25BCIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 168 | |
| N/A | | F59L1G81MB-25BG2M | ESMT | 1Gb NAND Flash | Flash Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,229 | |
| N/A | | F59L1G81MB-25BIAG2M | ESMT | 1Gb NAND Flash Auto. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 99 | |
| N/A | | F59L1G81MB-25BIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 639 | |
| N/A | | F59L1G81MB-25TG2M | ESMT | 1Gb NAND Flash | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 375 | |
| N/A | | F59L1G81MB-25TIAG2M | ESMT | 1Gb NAND Flash Auto. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,367 | |
| N/A | | F59L1G81MB-25TIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 222 | |
| N/A | | F59L1G81MB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Flash Memory | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 128M x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 297 | |
| N/A | | F59L2G81KA-25BCG2N | ESMT | 2Gb NAND Flash | Flash Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 539 | |
| N/A | | F59L2G81KA-25BCIAG2N | ESMT | 2Gb NAND Flash Auto. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,173 | |
| N/A | | F59L2G81KA-25BCIG2N | ESMT | 2Gb NAND Flash Ind. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 241 | |
| N/A | | F59L2G81KA-25BG2N | ESMT | 2Gb NAND Flash | Flash Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 970 | |
| N/A | | F59L2G81KA-25BIAG2N | ESMT | 2Gb NAND Flash Auto. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 386 | |