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Total Products: 65
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
IS21EF04GP-BCLIN/AIS21EF04GP-BCLIIntegrated Silicon Solution Inc4GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
647
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IS21EF04GP-BCLI-TRN/AIS21EF04GP-BCLI-TRIntegrated Silicon Solution Inc4GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
446
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IS21EF04GP-JCLIN/AIS21EF04GP-JCLIIntegrated Silicon Solution Inc4GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
1,365
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IS21EF04GP-JCLI-TRN/AIS21EF04GP-JCLI-TRIntegrated Silicon Solution Inc4GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
89
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QUOTE
IS21EF04GP-JQLIN/AIS21EF04GP-JQLIIntegrated Silicon Solution Inc4GB, 100 BALL FBGA, 3.3V, ROHS,Flash Memory100-LFBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
608
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QUOTE
IS21EF04GP-JQLI-TRN/AIS21EF04GP-JQLI-TRIntegrated Silicon Solution Inc4GB, 100 BALL FBGA, 3.3V, ROHS,Flash Memory100-LFBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
1,084
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QUOTE
IS21EF08G-BCLIN/AIS21EF08G-BCLIIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
1,609
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QUOTE
IS21EF08G-BCLI-TRN/AIS21EF08G-BCLI-TRIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
319
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QUOTE
IS21EF08G-JCLIN/AIS21EF08G-JCLIIntegrated Silicon Solution IncIC FLASH 64MBIT EMMC 153FBGAFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
1,470
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QUOTE
IS21EF08G-JCLI-TRN/AIS21EF08G-JCLI-TRIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
674
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QUOTE
IS21EF08G-JQLI-TRN/AIS21EF08G-JQLI-TRIntegrated Silicon Solution Inc8GB, 100 BALL FBGA, 3.3V, ROHS,Flash Memory100-LFBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
609
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QUOTE
IS21EF08GP-BCLIN/AIS21EF08GP-BCLIIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
688
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QUOTE
IS21EF08GP-BCLI-TRN/AIS21EF08GP-BCLI-TRIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
526
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QUOTE
IS21EF08GP-JCLIN/AIS21EF08GP-JCLIIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
14
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QUOTE
IS21EF08GP-JCLI-TRN/AIS21EF08GP-JCLI-TRIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
820
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QUOTE
IS21EF08GP-JQLIN/AIS21EF08GP-JQLIIntegrated Silicon Solution Inc8GB, 100 BALL FBGA, 3.3V, ROHS,Flash Memory100-LFBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
1,003
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QUOTE
IS21EF08GP-JQLI-TRN/AIS21EF08GP-JQLI-TRIntegrated Silicon Solution Inc8GB, 100 BALL FBGA, 3.3V, ROHS,Flash Memory100-LFBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
1,477
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QUOTE
IS22EF04GP-JCLA2N/AIS22EF04GP-JCLA2Integrated Silicon Solution Inc4GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 105°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
AEC-Q100
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
477
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QUOTE
N/AN/AIS22EF04GP-JCLA2-TRIntegrated Silicon Solution Inc4GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 105°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
AEC-Q100
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
176
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QUOTE
IS22EF04GP-JQLA2N/AIS22EF04GP-JQLA2Integrated Silicon Solution Inc4GB, 100 BALL FBGA, 3.3V, ROHS,Flash Memory100-LFBGA (14x18)2.7V ~ 3.6V-40°C ~ 105°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
AEC-Q100
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
345
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QUOTE

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