 | N/A | MT29F512G08CUCABH3-10:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,495 | |
 | N/A | MT29F512G08CUCABH3-10:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 949 | |
 | N/A | MT29F512G08CUCABH3-10ITZ:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 501 | |
 | N/A | MT29F512G08CUCABH3-10ITZ:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,849 | |
 | N/A | MT29F512G08CUCABH3-10R:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 18 | |
 | N/A | MT29F512G08CUCABH3-10R:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 293 | |
 | N/A | MT29F512G08CUCABH3-10RZ:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 329 | |
 | N/A | MT29F512G08CUCABH3-10RZ:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,167 | |
 | N/A | MT29F512G08CUCABH3-10Z:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 835 | |
 | N/A | MT29F512G08CUCABH3-10Z:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 361 | |
 | N/A | MT29F512G08CUCABH3-12:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 652 | |
 | N/A | MT29F512G08CUCABH3-12ITZ:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 929 | |
 | N/A | MT29F512G08CUCABH3-12ITZ:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 281 | |
 | N/A | MT29F512G08CUCABJ3-10RZ:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,282 | |
 | N/A | MT29F512G08CUCABJ3-10RZ:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 506 | |
 | N/A | MT29F512G08CUCDBJ6-6R:D | Micron Technology Inc. | IC FLASH 512GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,460 | |
 | N/A | MT29F512G08CUCDBJ6-6R:D TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 465 | |
| N/A | N/A | MT29F512G08EBHAFB17A3WC1-FES | Micron Technology Inc. | IC FLASH 512GBIT PARALLEL DIE | Flash Memory | Die | 2.5V ~ 3.6V | 0°C ~ 70°C | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,280 | |
| N/A | N/A | MT29F512G08EBHAFB17A3WC1-R | Micron Technology Inc. | IC FLASH 512GBIT PARALLEL DIE | Flash Memory | Die | 2.5V ~ 3.6V | 0°C ~ 70°C | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 722 | |
 | N/A | MT29F512G08EBHAFJ4-3ITF:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 823 | |