 | N/A | MT29F512G08EBHAFJ4-3ITFES:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 383 | |
 | N/A | MT29F512G08EBHAFJ4-3R:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 780 | |
 | N/A | MT29F512G08EBHAFJ4-3R:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 516 | |
 | N/A | MT29F512G08EBHAFJ4-3T:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 675 | |
 | N/A | MT29F512G08EBHAFJ4-3T:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 868 | |
 | N/A | MT29F512G08EBHBFJ4-R:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,499 | |
 | N/A | MT29F512G08EBHBFJ4-R:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,094 | |
 | N/A | MT29F512G08EBHBFJ4-T:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,287 | |
 | N/A | MT29F512G08EBHBFJ4-T:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 302 | |
 | N/A | MT29F512G08EBLCEJ4-R:C | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,221 | |
 | N/A | MT29F512G08EBLCEJ4-R:C TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,046 | |
| N/A | N/A | MT29F512G08EBLEEB47R3WC1-M | Micron Technology Inc. | IC FLASH 512GBIT DIE | Flash Memory | Die | N/A | N/A | Memory Organization: 64G x 8 Write Cycle Time Word Page: N/A | 1,020 | |
| N/A | N/A | MT29F512G08EBLEEB47R3WC1-R | Micron Technology Inc. | IC FLASH 512GBIT DIE | Flash Memory | Die | N/A | N/A | Memory Organization: 64G x 8 Write Cycle Time Word Page: N/A | 140 | |
 | N/A | MT29F512G08EBLEEJ4-R:E | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 644 | |
 | N/A | MT29F512G08EBLEEJ4-R:E TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 627 | |
 | N/A | MT29F512G08EBLEEJ4-T:E | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 179 | |
 | N/A | MT29F512G08EBLEEJ4-T:E TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 418 | |
 | N/A | MT29F512G08EECAGJ4-5M:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 616 | |
 | N/A | MT29F512G08EEHAFJ4-3R:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 730 | |
 | N/A | MT29F512G08EEHAFJ4-3R:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,966 | |