 | | MT29F32G08ABCDBJ4-6ITR:D | Micron Technology Inc. | IC FLASH 32GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 858 | |
 | | MT29F32G08ABCDBJ4-6ITR:D TR | Micron Technology Inc. | IC FLASH 32GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 766 | |
| N/A | | MT29F32G08ABEABM73A3WC1 | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL DIE | Flash Memory | Die | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 1,209 | |
| N/A | | MT29F32G08ABEABM73A3WC1L | Micron Technology Inc. | IC FLASH 32GBIT DIE | Flash Memory | Die | N/A | 0°C ~ 70°C | Memory Organization: 4G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 873 | |
| N/A | | MT29F32G08ABEABM73A3WC1P | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL DIE | Flash Memory | Die | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 44 | |
 | | MT29F32G08ABEDBJ4-12:D TR | Micron Technology Inc. | IC FLASH 32GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 559 | |
| N/A | | MT29F32G08ABEDBM83C3WC1 | Micron Technology Inc. | IC FLASH 32GBIT PAR 83MHZ DIE | Flash Memory | Die | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 1,154 | |
 | | MT29F32G08AECBBH1-12:B | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL 100VBGA | Flash Memory | 100-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 226 | |
 | | MT29F32G08AECBBH1-12:B TR | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL 100VBGA | Flash Memory | 100-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 107 | |
 | | MT29F32G08AECBBH1-12IT:B | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL 100VBGA | Flash Memory | 100-VBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 435 | |
 | | MT29F32G08AECBBH1-12IT:B TR | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL 100VBGA | Flash Memory | 100-VBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 1,164 | |
 | | MT29F32G08AECCBH1-10:C | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL 100VBGA | Flash Memory | 100-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 82 | |
 | | MT29F32G08AECCBH1-10:C TR | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL 100VBGA | Flash Memory | 100-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 1,306 | |
 | | MT29F32G08AECCBH1-10ITZ:C TR | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL 100VBGA | Flash Memory | 100-VBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 1,605 | |
 | | MT29F32G08AECCBH1-10Z:C | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL 100VBGA | Flash Memory | 100-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 448 | |
 | | MT29F32G08AECCBH1-10Z:C TR | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL 100VBGA | Flash Memory | 100-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 546 | |
 | | MT29F32G08AFABAWP-IT:B | Micron Technology Inc. | IC FLASH 32GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: N/A | 1,147 | |
 | | MT29F32G08AFABAWP-IT:B TR | Micron Technology Inc. | IC FLASH 32GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: N/A | 1,249 | |
 | | MT29F32G08AFABAWP:B | Micron Technology Inc. | IC FLASH 32GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: N/A | 409 | |
 | | MT29F32G08AFABAWP:B TR | Micron Technology Inc. | IC FLASH 32GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: N/A | 473 | |