 | | W25N512GVBIG | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 602 | |
 | | W25N512GVBIG TR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 129 | |
 | | W25N512GVBIR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,408 | |
 | | W25N512GVBIT | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 188 | |
 | | W25N512GVBIT TR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 208 | |
 | | W25N512GVEIG | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 624 | |
 | | W25N512GVEIG TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 922 | |
 | | W25N512GVEIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 836 | |
 | | W25N512GVEIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 706 | |
 | | W25N512GVEIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,055 | |
 | | W25N512GVEIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 832 | |
 | | W25N512GVFIG | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,416 | |
 | | W25N512GVFIG TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 394 | |
 | | W25N512GVFIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 83 | |
 | | W25N512GVFIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,168 | |
 | | W25N512GVFIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 637 | |
 | | W25N512GVFIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 522 | |
 | | W25N512GVPIG | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 47 | |
 | | W25N512GVPIG TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 100 | |
 | | W25N512GVPIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,738 | |