 | | W25N512GVPIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 182 | |
 | | W25N512GVPIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 422 | |
 | | W25N512GVPIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,398 | |
 | | W25N512GWBIR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 105 | |
 | | W25N512GWBIR TR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 599 | |
 | | W25N512GWBIT TR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 446 | |
 | | W25N512GWEIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,384 | |
 | | W25N512GWEIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,074 | |
 | | W25N512GWEIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,646 | |
 | | W25N512GWEIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 26 | |
 | | W25N512GWFIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 185 | |
 | | W25N512GWFIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 517 | |
 | | W25N512GWFIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 980 | |
 | | W25N512GWFIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 106 | |
 | | W25N512GWPIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 987 | |
 | | W25N512GWPIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,551 | |
 | | W25N512GWPIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 293 | |
 | | W25N512GWPIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 154 | |
 | | W25N512GWYIR TR | Winbond Electronics | IC FLASH 512MBIT SPI 48WLCSP | Flash Memory | 48-WLCSP | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 48-UFBGA, WLCSP Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 670 | |
 | | W25N512GWYIT TR | Winbond Electronics | IC FLASH 512MBIT SPI 48WLCSP | Flash Memory | 48-WLCSP | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 48-UFBGA, WLCSP Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 255 | |