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Total Products: 400
ImageData
Sheet
Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp
Additional SpecificationsQtyGet A
Quote
N/AF59D2G81KA-45BIAG2NESMT2Gb NAND Flash Auto.Flash MemoryBGA-631.7V ~ 1.95V-40°C – 105°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
63-BGA
659
N/AF59D2G81KA-45BIG2NESMT2Gb NAND Flash Ind.Flash MemoryBGA-631.7V ~ 1.95V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
594
N/AF59D2G81KA-45TG2NESMT2Gb NAND FlashFlash MemoryTSOPI-481.7V ~ 1.95V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
1,072
N/AF59D2G81KA-45TIAG2NESMT2Gb NAND Flash Auto.Flash MemoryTSOPI-481.7V ~ 1.95V-40°C – 105°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
48-TSOPI
593
N/AF59D2G81KA-45TIG2NESMT2Gb NAND Flash Ind.Flash MemoryTSOPI-481.7V ~ 1.95V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
1,437
N/AF59D2G81XA-45BG2BESMT2Gb NAND FlashFlash MemoryBGA-631.7V ~ 1.95V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
63-BGA
543
N/AF59D2G81XA-45BIG2BESMT2Gb NAND Flash Ind.Flash MemoryBGA-631.7V ~ 1.95V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
281
N/AF59D2G81XA-45TG2BESMT2Gb NAND FlashFlash MemoryTSOPI-481.7V ~ 1.95V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
960
N/AF59D2G81XA-45TIG2BESMT2Gb NAND Flash Ind.Flash MemoryTSOPI-481.7V ~ 1.95V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
236
N/AF59D2G81XA-IP(2B)ESMT2Gb NAND Flash Ind.Flash Memory48 Pin TSOPI/ 63 Ball BGA2.5V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48 Pin TSOPI/ 63 Ball BGA
882
N/AF59D4G81KA-45BCG2RESMT4Gb NAND FlashFlash MemoryBGA-671.7V ~ 1.95V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
67-BGA
784
N/AF59D4G81KA-45BCIG2RESMT4Gb NAND Flash Ind.Flash MemoryBGA-671.7V ~ 1.95V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
67-BGA
416
N/AF59D4G81KA-45BG2RESMT4Gb NAND FlashFlash MemoryBGA-631.7V ~ 1.95V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
63-BGA
1,199
N/AF59D4G81KA-45BIG2RESMT4Gb NAND Flash Ind.Flash MemoryBGA-631.7V ~ 1.95V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
751
N/AF59D4G81KA-45TG2RESMT4Gb NAND FlashFlash MemoryTSOPI-481.7V ~ 1.95V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
1,122
N/AF59D4G81KA-45TIG2RESMT4Gb NAND Flash Ind.Flash MemoryTSOPI-481.7V ~ 1.95V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
1,068
N/AF59D4G81XB-45BCG2XESMT4Gb NAND FlashFlash MemoryBGA-671.7V ~ 1.95V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
67-BGA
320
N/AF59D4G81XB-45BCIAG2XESMT4Gb NAND Flash Auto.Flash MemoryBGA-671.7V ~ 1.95V-40°C – 105°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
67-BGA
349
N/AF59D4G81XB-45BCIG2XESMT4Gb NAND Flash Ind.Flash MemoryBGA-671.7V ~ 1.95V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
67-BGA
722
N/AF59D4G81XB-45BG2XESMT4Gb NAND FlashFlash MemoryBGA-631.7V ~ 1.95V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
63-BGA
544

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