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Suntsu Electronics is your reliable source for hard-to-find and obsolete electronic components. Our advanced part search tool makes it easy to quickly find the products you need. You can search by part number, manufacturer, or specifications to instantly access a comprehensive database of electronic components.

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Total Products: 400
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
N/A
F59L8G81KSA-25TIG2RESMT8Gb NAND Flash Ind.Flash MemoryTSOPI-482.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8 x 2 die
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
1,264
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N/A
F59L8G81XA-25BG2YESMT8Gb NAND FlashFlash MemoryBGA-632.7V ~ 3.6V0°C – 70°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
63-BGA
479
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N/A
F59L8G81XA-25BIG2YESMT8Gb NAND Flash Ind.Flash MemoryBGA-632.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
1,023
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N/A
F59L8G81XA-25TG2YESMT8Gb NAND FlashFlash MemoryTSOPI-482.7V ~ 3.6V0°C – 70°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
1,798
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N/A
F59L8G81XA-25TIG2YESMT8Gb NAND Flash Ind.Flash MemoryTSOPI-482.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
93
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N/AN/AFM62D1G1GMB (2G)ESMT1Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162 ball2.5V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162 ball
1,743
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N/AN/AFM62D2G2GKA (2Q)ESMT2Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
873
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N/AN/AFM62D2G2GXA (2L)ESMT2Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
514
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N/AN/AFM62D4G2GXB (2V)ESMT4Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
902
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N/AN/AFM6BD1G1GMB (2G)ESMT1Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162 ball2.5V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
32M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162 ball
966
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N/AN/AFM6BD2G2GXA(2L)ESMT2Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
1,850
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QUOTE
N/AN/AFM6BD2G2GXA2LESMT2Gb NAND+LPDDR2 MCP Ind.Flash Memory10.5x8 (mm),162ball2.5V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
95
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QUOTE
N/AN/AFM6BD4G2GXB(2V)ESMT4Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
303
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QUOTE
N/AN/AFM6BD4G4GKMA (2J)ESMT4Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162 ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162 ball
12
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N/AN/AFM6BD4G4GXMB (2V)ESMT4Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162 ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162 ball
784
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QUOTE
N/AN/AFM6HZ4G4GXBESMT4Gb NAND+LPDDR4x MCPFlash Memory9.5x8 (mm),149ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
2.133 GHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
256M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
9.5x8 (mm),149ball
809
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N/AN/AFM6HZ8G8GKDZA (2R)ESMT8Gb NAND+LPDDR4x MCP Auto.Flash Memory9.5x8 (mm),149ball2.5V-40°C – 105°C
Memory Size:
8 Gbit
Clock Frequency:
2.133 GHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
256M x 16 x 2 die
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
9.5x8 (mm),149ball
1,509
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QUOTE
N/AN/AKGD-128Mbx8-SLC-NAND-Flash,-x8,-1.8V/3VESMTNAND Flash KGDFlash MemoryN/A2.5VN/A
Memory Size:
N/A
Clock Frequency:
N/A
Write Cycle Time Word Page:
N/A
Access Time:
N/A
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Known Good Die
Qualification:
N/A
Packaging:
N/A
1,426
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QUOTE
N/AN/AKGD-256Mbx8-SLC-NAND-Flash,-x8,-1.8V/3.3VESMTNAND Flash KGDFlash MemoryN/A2.5VN/A
Memory Size:
N/A
Clock Frequency:
N/A
Write Cycle Time Word Page:
N/A
Access Time:
N/A
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Known Good Die
Qualification:
N/A
Packaging:
N/A
440
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QUOTE
N/AN/AKGD-512Mbx8-SLC-NAND-Flash,-x8,-1.8V/-3VESMTNAND Flash KGDFlash MemoryN/A2.5VN/A
Memory Size:
N/A
Clock Frequency:
N/A
Write Cycle Time Word Page:
N/A
Access Time:
N/A
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Known Good Die
Qualification:
N/A
Packaging:
N/A
800
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