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Electronic Parts Search

Suntsu Electronics is your reliable source for hard-to-find and obsolete electronic components. Our advanced part search tool makes it easy to quickly find the products you need. You can search by part number, manufacturer, or specifications to instantly access a comprehensive database of electronic components.

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Total Products: 1,408
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
N/A
EN35SXR512A-133FIP(2PC)ESMT512Mb SPI NOR Flash Ind.Flash Memory16-pin SOP 300mil2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
133 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
16-pin SOP 300mil
386
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N/A
EN35SXR512A-133HIP(2PC)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin SOP 200mil2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
133 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin SOP 200mil
160
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N/A
EN35SXR512A-133WIP(2PC)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin WSON 5x6mm2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
133 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin WSON 5x6mm
392
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N/A
EN35SXR512A-133YIP(2PC)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin WSON 8x6mm2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
133 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin WSON 8x6mm
1,820
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N/A
EN35SXR64A-104XDIP(2UC)ESMT64Mb SPI NOR Flash Ind.Flash Memory8-contact USON 4x4mm2.5V-40°C – 85°C
Memory Size:
64 Mbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
512K x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-contact USON 4x4mm
380
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QUOTE
N/A
EN35SY512A-104FIP(2PC)ESMT512Mb SPI NOR Flash Ind.Flash Memory16-pin SOP 300mil2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
16-pin SOP 300mil
1,096
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N/A
EN35SY512A-104HIP(2PC)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin SOP 200mil2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin SOP 200mil
781
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QUOTE
N/A
EN35SY512A-104WIP(2PC)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin WSON 5x6mm2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin WSON 5x6mm
1,285
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QUOTE
N/A
EN35SY512A-104YIP(2PC)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin WSON 8x6mm2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin WSON 8x6mm
603
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QUOTE
N/A
EN35SY512A-133FIP(2P)ESMT512Mb SPI NOR Flash Ind.Flash Memory16-pin SOP 300mil2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
133 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
16-pin SOP 300mil
578
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QUOTE
N/A
EN35SY512A-133HIP(2P)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin SOP 200mil2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
133 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin SOP 200mil
500
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QUOTE
N/A
EN35SY512A-133WIP(2P)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin WSON 5x6mm2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
133 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin WSON 5x6mm
1,698
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QUOTE
N/A
EN35SY512A-133YIP(2P)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin WSON 8x6mm2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
133 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin WSON 8x6mm
11
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N/AN/AF50D1G41LB (2M)ESMT1Gb NAND Flash Auto.Flash Memory8-contact WSON2.5V-40°C – 105°C
Memory Size:
1 Gbit
Clock Frequency:
83 MHz
Write Cycle Time Word Page:
900 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SPI NAND
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
8-contact WSON
1,629
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N/A
F50D1G41LB-IP(2M)ESMT1Gb SPI NAND Flash Ind.Flash Memory8-contact WSON2.5V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
50 MHz
Write Cycle Time Word Page:
900 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SPI NAND
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-contact WSON
1,034
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N/A
F50D1G41LC (2P)ESMT1Gb SPI NAND Flash Ind.Flash Memory8-contact WSON2.5V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
900 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SPI NAND
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-contact WSON
661
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QUOTE
N/A
F50D2G41KA(2V)ESMT2Gb SPI NAND Flash Ind.Flash Memory8-contact WSON2.5V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
600 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SPI NAND
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-contact WSON
1,662
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QUOTE
N/AN/AF50D2G41KA2VESMT2Gb SPI NAND Flash Auto.Flash Memory8-contact WSON2.5V-40°C – 105°C
Memory Size:
2 Gbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
600 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SPI NAND
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
8-contact WSON
265
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QUOTE
N/AN/AF50D2G41KB (2P)ESMT2Gb SPI NAND Flash Ind.Flash Memory8-contact WSON2.5V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
600 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SPI NAND Flash
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-contact WSON
1,602
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QUOTE
N/A
F50D2G41XA-IP(2B)ESMT2Gb SPI NAND Flash Ind.Flash Memory8-contact WSON2.5V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
600 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SPI NAND
Memory Organization:
2G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-contact WSON
38
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