| N/A | | F50D2G41XA-IP(2BE) | ESMT | 2Gb SPI NAND Flash Ind. | Flash Memory | 8-contact LGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 2G x 8 Memory Interface: Parallel | 1,670 | |
| N/A | | F50D4G41XB-IP(2X) | ESMT | 4Gb SPI NAND Flash Ind. | Flash Memory | 8-contact LGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 4G x 8 Memory Interface: Parallel | 1,615 | |
| N/A | | F50D4G41XB-IP(2XE) | ESMT | 4Gb SPI NAND Flash Ind. | Flash Memory | 8-contact LGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 4G x 8 Memory Interface: Parallel | 1,355 | |
| N/A | | F50L1G41LB-IP(2M) | ESMT | 1Gb SPI NAND Flash Ind. | Flash Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 900 µs Memory Organization: 1G x 8 Memory Interface: Parallel | 47 | |
| N/A | | F50L1G41LC (2P) | ESMT | 1Gb SPI NAND Flash Ind. | Flash Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 900 µs Memory Organization: 1G x 8 Memory Interface: Parallel | 12 | |
| N/A | | F50L1G41XA-IP(2B) | ESMT | 1Gb SPI NAND Flash Ind. | Flash Memory | 8-contact WSON/ 24 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 1G x 8 Memory Interface: Parallel Packaging: 8-contact WSON/ 24 Ball BGA | 1,221 | |
| N/A | | F50L2G41KA (2V) | ESMT | 2Gb SPI NAND Flash Ind. | Flash Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 256M x 8 Memory Interface: Parallel | 723 | |
| N/A | | F50L2G41KA2V | ESMT | 2Gb SPI NAND Flash Ind. | Flash Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 256M x 8 Memory Interface: Parallel | 148 | |
| N/A | N/A | F50L2G41KB (2P) | ESMT | 2Gb SPI NAND Flash Ind. | Flash Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Technology: SPI NAND Flash Memory Organization: 256M x 8 Memory Interface: Parallel | 628 | |
| N/A | | F50L2G41XA-IP(2B) | ESMT | 2Gb SPI NAND Flash Ind. | Flash Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 2G x 8 Memory Interface: Parallel | 1,279 | |
| N/A | | F50L2G41XA-IP(2BE) | ESMT | 2Gb SPI NAND Flash Ind. | Flash Memory | 8-contact LGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 2G x 8 Memory Interface: Parallel | 240 | |
| N/A | | F50L4G41XB-IP(2X) | ESMT | 4Gb SPI NAND Flash Ind. | Flash Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 4G x 8 Memory Interface: Parallel | 947 | |
| N/A | | F59D1G161LB-45BG2M | ESMT | 1Gb NAND Flash | Flash Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 695 | |
| N/A | | F59D1G161LB-45BIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 254 | |
| N/A | | F59D1G161LB-45TG2M | ESMT | 1Gb NAND Flash | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 268 | |
| N/A | | F59D1G161LB-45TIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 1,121 | |
| N/A | | F59D1G161LB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Flash Memory | 48 pin TSOPI/ 63 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 1G x 16 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA | 1,733 | |
| N/A | | F59D1G161MB-45BG2M | ESMT | 1Gb NAND Flash | Flash Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 793 | |
| N/A | | F59D1G161MB-45BIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 229 | |
| N/A | | F59D1G161MB-45TG2M | ESMT | 1Gb NAND Flash | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 250 | |