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Electronic Parts Search

Suntsu Electronics is your reliable source for hard-to-find and obsolete electronic components. Our advanced part search tool makes it easy to quickly find the products you need. You can search by part number, manufacturer, or specifications to instantly access a comprehensive database of electronic components.

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Total Products: 1,408
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
N/A
F59D4G81XB-45BCIAG2XESMT4Gb NAND Flash Auto.Flash MemoryBGA-671.7V ~ 1.95V-40°C – 105°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
67-BGA
349
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N/A
F59D4G81XB-45BCIG2XESMT4Gb NAND Flash Ind.Flash MemoryBGA-671.7V ~ 1.95V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
67-BGA
722
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N/A
F59D4G81XB-45BG2XESMT4Gb NAND FlashFlash MemoryBGA-631.7V ~ 1.95V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
63-BGA
544
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N/A
F59D4G81XB-45BIAG2XESMT4Gb NAND Flash Auto.Flash MemoryBGA-631.7V ~ 1.95V-40°C – 105°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
63-BGA
953
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N/A
F59D4G81XB-45BIG2XESMT4Gb NAND Flash Ind.Flash MemoryBGA-631.7V ~ 1.95V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
326
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QUOTE
N/A
F59D4G81XB-45TG2XESMT4Gb NAND FlashFlash MemoryTSOPI-481.7V ~ 1.95V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
565
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N/A
F59D4G81XB-45TIAG2XESMT4Gb NAND Flash Auto.Flash MemoryTSOPI-481.7V ~ 1.95V-40°C – 105°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
48-TSOPI
445
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QUOTE
N/A
F59D4G81XB-45TIG2XESMT4Gb NAND Flash Ind.Flash MemoryTSOPI-481.7V ~ 1.95V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
506
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QUOTE
N/A
F59D4G81XB-IP(2X)ESMT4Gb NAND Flash Ind.Flash Memory48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA2.5V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA
1,139
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QUOTE
N/AN/AF59D8G81KSA (2R)ESMT8Gb NAND Flash Auto.Flash Memory48 pin TSOPI/ 63 Ball BGA1.7V ~ 1.95V-40°C – 105°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
512M x 8 x 2 die
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
48 pin TSOPI/ 63 Ball BGA
1,171
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QUOTE
N/A
F59D8G81KSA-45BG2RESMT8Gb NAND FlashFlash MemoryBGA-631.7V ~ 1.95V0°C – 70°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8 x 2 die
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
63-BGA
63
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QUOTE
N/A
F59D8G81KSA-45BIAG2RESMT8Gb NAND Flash Auto.Flash MemoryBGA-631.7V ~ 1.95V-40°C – 105°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8 x 2 die
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
63-BGA
569
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QUOTE
N/A
F59D8G81KSA-45BIG2RESMT8Gb NAND Flash Ind.Flash MemoryBGA-631.7V ~ 1.95V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8 x 2 die
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
845
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QUOTE
N/A
F59D8G81KSA-45TG2RESMT8Gb NAND FlashFlash MemoryTSOPI-481.7V ~ 1.95V0°C – 70°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8 x 2 die
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
740
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QUOTE
N/A
F59D8G81KSA-45TIAG2RESMT8Gb NAND Flash Auto.Flash MemoryTSOPI-481.7V ~ 1.95V-40°C – 105°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8 x 2 die
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
48-TSOPI
1,164
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QUOTE
N/A
F59D8G81KSA-45TIG2RESMT8Gb NAND Flash Ind.Flash MemoryTSOPI-481.7V ~ 1.95V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8 x 2 die
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
718
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QUOTE
N/A
F59D8G81XA-45BIG2YESMT8Gb NAND Flash Ind.Flash MemoryBGA-631.7V ~ 1.95V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
1,350
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QUOTE
N/A
F59D8G81XA-45TIG2YESMT8Gb NAND Flash Ind.Flash MemoryTSOPI-481.7V ~ 1.95V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
1,706
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QUOTE
N/A
F59L1G81LB-25BCG2MESMT1Gb NAND FlashFlash MemoryBGA-672.7V ~ 3.6V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
67-BGA
975
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QUOTE
N/A
F59L1G81LB-25BCIAG2MESMT1Gb NAND Flash Auto.Flash MemoryBGA-672.7V ~ 3.6V-40°C – 105°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
67-BGA
1,660
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QUOTE

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