| N/A | | F59L2G81KA-25BCIG2N | ESMT | 2Gb NAND Flash Ind. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 241 | |
| N/A | | F59L2G81KA-25BG2N | ESMT | 2Gb NAND Flash | Flash Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 970 | |
| N/A | | F59L2G81KA-25BIAG2N | ESMT | 2Gb NAND Flash Auto. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 386 | |
| N/A | | F59L2G81KA-25BIG2N | ESMT | 2Gb NAND Flash Ind. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 375 | |
| N/A | | F59L2G81KA-25TG2N | ESMT | 2Gb NAND Flash | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 705 | |
| N/A | | F59L2G81KA-25TIAG2N | ESMT | 2Gb NAND Flash Auto. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 33 | |
| N/A | | F59L2G81KA-25TIG2N | ESMT | 2Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 627 | |
| N/A | | F59L2G81XA-25BCG2B | ESMT | 2Gb NAND Flash | Flash Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,028 | |
| N/A | | F59L2G81XA-25BCIG2B | ESMT | 2Gb NAND Flash Ind. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,228 | |
| N/A | | F59L2G81XA-25BG2B | ESMT | 2Gb NAND Flash | Flash Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 529 | |
| N/A | | F59L2G81XA-25BIG2B | ESMT | 2Gb NAND Flash Ind. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 224 | |
| N/A | | F59L2G81XA-25TG2B | ESMT | 2Gb NAND Flash | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 601 | |
| N/A | | F59L2G81XA-25TIG2B | ESMT | 2Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 618 | |
| N/A | N/A | F59L4G161KA-25BCG2R | ESMT | 4Gb NAND Flash | Flash Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 16 Memory Interface: Parallel | 1,096 | |
| N/A | N/A | F59L4G161KA-25BCIG2R | ESMT | 4Gb NAND Flash Ind. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 16 Memory Interface: Parallel | 135 | |
| N/A | | F59L4G81KA-25BCG2R | ESMT | 4Gb NAND Flash | Flash Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 759 | |
| N/A | | F59L4G81KA-25BCIAG2R | ESMT | 4Gb NAND Flash Auto. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 898 | |
| N/A | | F59L4G81KA-25BCIG2R | ESMT | 4Gb NAND Flash Ind. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,003 | |
| N/A | | F59L4G81KA-25BG2R | ESMT | 4Gb NAND Flash | Flash Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,418 | |
| N/A | | F59L4G81KA-25BIAG2R | ESMT | 4Gb NAND Flash Auto. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 222 | |