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Total Products: 1,408
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
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N/AN/AFM6BD2G2GXA2LESMT2Gb NAND+LPDDR2 MCP Ind.Flash Memory10.5x8 (mm),162ball2.5V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
95
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N/AN/AFM6BD4G2GXB(2V)ESMT4Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
303
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N/AN/AFM6BD4G4GKMA (2J)ESMT4Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162 ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162 ball
12
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N/AN/AFM6BD4G4GXMB (2V)ESMT4Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162 ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162 ball
784
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N/AN/AFM6HZ4G4GXBESMT4Gb NAND+LPDDR4x MCPFlash Memory9.5x8 (mm),149ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
2.133 GHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
256M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
9.5x8 (mm),149ball
809
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N/AN/AFM6HZ8G8GKDZA (2R)ESMT8Gb NAND+LPDDR4x MCP Auto.Flash Memory9.5x8 (mm),149ball2.5V-40°C – 105°C
Memory Size:
8 Gbit
Clock Frequency:
2.133 GHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
256M x 16 x 2 die
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
9.5x8 (mm),149ball
1,509
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IS21EF04GP-BCLIN/AIS21EF04GP-BCLIIntegrated Silicon Solution Inc4GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
647
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QUOTE
IS21EF04GP-BCLI-TRN/AIS21EF04GP-BCLI-TRIntegrated Silicon Solution Inc4GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
446
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QUOTE
IS21EF04GP-JCLIN/AIS21EF04GP-JCLIIntegrated Silicon Solution Inc4GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
1,365
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IS21EF04GP-JCLI-TRN/AIS21EF04GP-JCLI-TRIntegrated Silicon Solution Inc4GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
89
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QUOTE
IS21EF04GP-JQLIN/AIS21EF04GP-JQLIIntegrated Silicon Solution Inc4GB, 100 BALL FBGA, 3.3V, ROHS,Flash Memory100-LFBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
608
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QUOTE
IS21EF04GP-JQLI-TRN/AIS21EF04GP-JQLI-TRIntegrated Silicon Solution Inc4GB, 100 BALL FBGA, 3.3V, ROHS,Flash Memory100-LFBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
1,084
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QUOTE
IS21EF08G-BCLIN/AIS21EF08G-BCLIIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
1,609
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QUOTE
IS21EF08G-BCLI-TRN/AIS21EF08G-BCLI-TRIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
319
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QUOTE
IS21EF08G-JCLIN/AIS21EF08G-JCLIIntegrated Silicon Solution IncIC FLASH 64MBIT EMMC 153FBGAFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
1,470
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QUOTE
IS21EF08G-JCLI-TRN/AIS21EF08G-JCLI-TRIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
674
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QUOTE
IS21EF08G-JQLI-TRN/AIS21EF08G-JQLI-TRIntegrated Silicon Solution Inc8GB, 100 BALL FBGA, 3.3V, ROHS,Flash Memory100-LFBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
609
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QUOTE
IS21EF08GP-BCLIN/AIS21EF08GP-BCLIIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
688
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QUOTE
IS21EF08GP-BCLI-TRN/AIS21EF08GP-BCLI-TRIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
526
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QUOTE
IS21EF08GP-JCLIN/AIS21EF08GP-JCLIIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
14
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QUOTE

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