 | N/A | MT29E512G08CEHBBJ4-3:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Write Cycle Time Word Page: N/A | 943 | |
 | N/A | MT29E512G08CEHBBJ4-3:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Write Cycle Time Word Page: N/A | 627 | |
| N/A | N/A | MT29E512G08CKCCBH7-6:C | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Write Cycle Time Word Page: N/A | 1,893 | |
| N/A | N/A | MT29E512G08CMCBBH7-6:B TR | Micron Technology Inc. | IC FLASH 512GBIT PARALLEL 167MHZ | Flash Memory | N/A | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Write Cycle Time Word Page: N/A | 986 | |
| N/A | N/A | MT29E512G08CMCCBH7-6:C | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Write Cycle Time Word Page: N/A | 506 | |
 | N/A | MT29F256G08AKCBBH7-6:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,325 | |
 | N/A | MT29F256G08AKCBBH7-6IT:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 205 | |
 | N/A | MT29F256G08AKCBBH7-6IT:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,175 | |
 | N/A | MT29F256G08AMCBBH7-6:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 33 | |
 | N/A | MT29F256G08AMCBBH7-6IT:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 843 | |
 | N/A | MT29F256G08AMCBBH7-6IT:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,148 | |
 | N/A | MT29F256G08AMEBBH7-12:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 451 | |
 | N/A | MT29F256G08AMEBBH7-12:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,057 | |
 | N/A | MT29F256G08APEDBJ6-12:D | Micron Technology Inc. | IC FLASH 256GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,464 | |
 | N/A | MT29F256G08AUAAAC5-IT:A | Micron Technology Inc. | IC FLASH 256GBIT PARALLEL 52VLGA | Flash Memory | 52-VLGA (18x14) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 82 | |
 | N/A | MT29F256G08AUAAAC5-ITZ:A | Micron Technology Inc. | IC FLASH 256GBIT PARALLEL 52VLGA | Flash Memory | 52-VLGA (18x14) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 183 | |
 | N/A | MT29F256G08AUAAAC5-ITZ:A TR | Micron Technology Inc. | IC FLASH 256GBIT PARALLEL 52VLGA | Flash Memory | 52-VLGA (18x14) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 950 | |
 | N/A | MT29F256G08AUAAAC5:A | Micron Technology Inc. | IC FLASH 256GBIT PARALLEL 52VLGA | Flash Memory | 52-VLGA (18x14) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,929 | |
 | N/A | MT29F256G08AUCABH3-10:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 114 | |
 | N/A | MT29F256G08AUCABH3-10IT:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,381 | |