 | N/A | MT29F256G08AUCABH3-10IT:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 57 | |
 | | MT29F256G08AUCABH3-10ITZ:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,681 | |
 | N/A | MT29F256G08AUCABH3-10ITZ:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 227 | |
 | N/A | MT29F256G08AUCABH3-10Z:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 752 | |
 | N/A | MT29F256G08AUCABH3-10Z:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 506 | |
 | | MT29F256G08AUCABJ3-10Z:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 280 | |
 | | MT29F256G08AUCABJ3-10Z:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 439 | |
| N/A | N/A | MT29F256G08AUCABK4-10:A | Micron Technology Inc. | IC FLASH 256GBIT PARALLEL 100MHZ | Flash Memory | N/A | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,903 | |
 | N/A | MT29F256G08AUCDBJ6-6:D | Micron Technology Inc. | IC FLASH 256GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 606 | |
 | N/A | MT29F256G08AUCDBJ6-6IT:D | Micron Technology Inc. | IC FLASH 256GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 843 | |
 | N/A | MT29F256G08AUCDBJ6-6IT:D TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 423 | |
 | N/A | MT29F256G08AUEDBJ6-12:D TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 154 | |
 | N/A | MT29F256G08CBCBBJ4-37:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 185 | |
 | N/A | MT29F256G08CBCBBJ4-5M:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,524 | |
 | N/A | MT29F256G08CBCBBJ4-5M:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,609 | |
| N/A | N/A | MT29F256G08CBCBBL06B3WC1 | Micron Technology Inc. | IC FLASH 256GBIT PARALLEL DIE | Flash Memory | Die | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,436 | |
 | N/A | MT29F256G08CBCBBWP-10:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,213 | |
 | N/A | MT29F256G08CBCBBWP-10:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 925 | |
 | N/A | MT29F256G08CBCBBWP-10ES:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,236 | |
 | N/A | MT29F256G08CBCBBWP-10M:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 603 | |