 | N/A | MT29F256G08CBCBBWP-10M:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,042 | |
 | N/A | MT29F256G08CBHBBJ4-3R:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 46 | |
 | N/A | MT29F256G08CBHBBJ4-3R:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 259 | |
 | N/A | MT29F256G08CECABH6-6:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 632 | |
 | N/A | MT29F256G08CECABH6-6:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,493 | |
 | N/A | MT29F256G08CECABH6-6R:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 123 | |
 | N/A | MT29F256G08CECBBH6-6ITR:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 20 | |
 | N/A | MT29F256G08CECBBH6-6R:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 45 | |
 | N/A | MT29F256G08CECCBH6-6C:C | Micron Technology Inc. | IC FLASH 256GBIT PAR 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1 | |
 | N/A | MT29F256G08CECCBH6-6ITR:C | Micron Technology Inc. | IC FLASH 256GBIT PAR 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 346 | |
 | N/A | MT29F256G08CECCBH6-6ITR:C TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,140 | |
 | N/A | MT29F256G08CECCBH6-6R:C | Micron Technology Inc. | IC FLASH 256GBIT PAR 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 31 | |
 | N/A | MT29F256G08CECCBH6-6R:C TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 318 | |
 | N/A | MT29F256G08CECEBJ4-37ITR:E | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 292 | |
 | N/A | MT29F256G08CECEBJ4-37ITR:E TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,068 | |
 | N/A | MT29F256G08CECEBJ4-37ITRES:E TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 10 | |
 | N/A | MT29F256G08CEEABH6-12IT:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.5V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 551 | |
 | N/A | MT29F256G08CEECBH6-12:C | Micron Technology Inc. | IC FLASH 256GBIT PAR 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 474 | |
 | N/A | MT29F256G08CEECBH6-12:C TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 440 | |
 | N/A | MT29F256G08CJAAAWP-IT:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,249 | |