 | N/A | MT29F256G08CKCABH2-10Z:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,687 | |
 | N/A | MT29F256G08CKCABH2-12:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,701 | |
 | N/A | MT29F256G08CKCABH2-12Z:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 775 | |
 | N/A | MT29F256G08CKCABH2-12Z:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 229 | |
 | N/A | MT29F256G08CKCDBJ5-6R:D | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 858 | |
 | N/A | MT29F256G08CKCDBJ5-6R:D TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 605 | |
 | N/A | MT29F256G08CMAAAC5:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 52VLGA | Flash Memory | 52-VLGA (18x14) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 267 | |
 | N/A | MT29F256G08CMAAAC5:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 52VLGA | Flash Memory | 52-VLGA (18x14) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,687 | |
 | N/A | MT29F256G08CMCABH2-10RZ:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,810 | |
 | N/A | MT29F256G08CMCABH2-10RZ:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,237 | |
 | N/A | MT29F256G08CMCABH2-10Z:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,565 | |
 | N/A | MT29F256G08CMCABH2-10Z:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 482 | |
 | N/A | MT29F256G08CMCABH2-12:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 806 | |
 | N/A | MT29F256G08CMCABH2-12ITZ:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 723 | |
 | N/A | MT29F256G08CMCABH2-12ITZ:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 592 | |
 | N/A | MT29F256G08CMCABJ2-10RZ:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,738 | |
 | N/A | MT29F256G08CMCABJ2-10RZ:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 257 | |
 | N/A | MT29F256G08CMCBBH2-10:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 586 | |
 | N/A | MT29F256G08CMCBBH2-10:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,190 | |
 | N/A | MT29F256G08CMCDBJ5-6R:D | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 228 | |