 | N/A | MT29F32G08CBADBWPR:D TR | Micron Technology Inc. | IC FLASH 32GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: N/A | 1,273 | |
 | N/A | MT29F32G08CBCCBH1-12Z:C | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL 100VBGA | Flash Memory | 100-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 1,762 | |
 | N/A | MT29F32G08CBCCBH1-12Z:C TR | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL 100VBGA | Flash Memory | 100-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 1,418 | |
 | N/A | MT29F32G08CBCDBJ4-10:D TR | Micron Technology Inc. | IC FLASH 32GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 424 | |
| N/A | N/A | MT29F32G08CBEDBL83A3WC1 | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL DIE | Flash Memory | Die | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 12 | |
 | N/A | MT29F32G08CFACAWP:C | Micron Technology Inc. | IC FLASH 32GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: N/A | 1,087 | |
 | N/A | MT29F32G08CFACAWP:C TR | Micron Technology Inc. | IC FLASH 32GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,997 | |
 | N/A | MT29F32G08CFACBWP-12:C | Micron Technology Inc. | IC FLASH 32GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: N/A | 789 | |
 | N/A | MT29F32G08QAAWP:A TR | Micron Technology Inc. | IC FLASH 32GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: N/A | 1,879 | |
 | N/A | MT29F512G08AUCBBH8-6:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152LBGA | Flash Memory | 152-LBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 482 | |
 | N/A | MT29F512G08AUCBBH8-6IT:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 152LBGA | Flash Memory | 152-LBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 59 | |
 | N/A | MT29F512G08AUCBBH8-6IT:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152LBGA | Flash Memory | 152-LBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 896 | |
| N/A | N/A | MT29F512G08AUCBBK8-6:B TR | Micron Technology Inc. | IC FLASH 512GBIT PARALLEL 166MHZ | Flash Memory | N/A | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 290 | |
 | N/A | MT29F512G08AUEBBH8-12:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 152LBGA | Flash Memory | 152-LBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 260 | |
 | N/A | MT29F512G08AUEBBH8-12:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152LBGA | Flash Memory | 152-LBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 886 | |
 | N/A | MT29F512G08CECBBJ4-37:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,959 | |
 | N/A | MT29F512G08CECBBJ4-37:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 10 | |
 | N/A | MT29F512G08CECBBJ4-5M:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 361 | |
 | N/A | MT29F512G08CECBBJ4-5M:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 157 | |
 | N/A | MT29F512G08CEHBBJ4-3R:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,557 | |