 | N/A | MT29F512G08CEHBBJ4-3R:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 371 | |
 | N/A | MT29F512G08CFCBBWP-10:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,919 | |
 | N/A | MT29F512G08CFCBBWP-10:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 782 | |
 | N/A | MT29F512G08CFCBBWP-10ES:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 309 | |
 | N/A | MT29F512G08CFCBBWP-10M:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 600 | |
 | N/A | MT29F512G08CKCABH7-6:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 713 | |
 | N/A | MT29F512G08CKCABH7-6:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,922 | |
 | N/A | MT29F512G08CKCABH7-6R:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 432 | |
| N/A | N/A | MT29F512G08CKCABK7-6:A | Micron Technology Inc. | IC FLASH 512GBIT PARALLEL 166MHZ | Flash Memory | N/A | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,045 | |
 | N/A | MT29F512G08CKCCBH7-6R:C | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,055 | |
 | N/A | MT29F512G08CKCCBH7-6R:C TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 782 | |
 | N/A | MT29F512G08CKECBH7-12:C | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 76 | |
 | N/A | MT29F512G08CKECBH7-12:C TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 288 | |
 | N/A | MT29F512G08CMCABH7-6:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 61 | |
 | N/A | MT29F512G08CMCABH7-6:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 584 | |
 | N/A | MT29F512G08CMCABH7-6C:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 260 | |
 | N/A | MT29F512G08CMCABH7-6R:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 311 | |
 | N/A | MT29F512G08CMCBBH7-6C:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 588 | |
 | N/A | MT29F512G08CMCBBH7-6ITR:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 939 | |
 | N/A | MT29F512G08CMCBBH7-6R:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 820 | |