 | N/A | MT29F512G08EBHBFJ4-T:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,287 | |
 | N/A | MT29F512G08EBHBFJ4-T:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 302 | |
 | N/A | MT29F512G08EBLCEJ4-R:C | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,221 | |
 | N/A | MT29F512G08EBLCEJ4-R:C TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,046 | |
| N/A | N/A | MT29F512G08EBLEEB47R3WC1-M | Micron Technology Inc. | IC FLASH 512GBIT DIE | Flash Memory | Die | N/A | N/A | Memory Organization: 64G x 8 Write Cycle Time Word Page: N/A | 1,020 | |
| N/A | N/A | MT29F512G08EBLEEB47R3WC1-R | Micron Technology Inc. | IC FLASH 512GBIT DIE | Flash Memory | Die | N/A | N/A | Memory Organization: 64G x 8 Write Cycle Time Word Page: N/A | 140 | |
 | N/A | MT29F512G08EBLEEJ4-R:E | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 644 | |
 | N/A | MT29F512G08EBLEEJ4-R:E TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 627 | |
 | N/A | MT29F512G08EBLEEJ4-T:E | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 179 | |
 | N/A | MT29F512G08EBLEEJ4-T:E TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 418 | |
 | N/A | MT29F512G08EECAGJ4-5M:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 616 | |
 | N/A | MT29F512G08EEHAFJ4-3R:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 730 | |
 | N/A | MT29F512G08EEHAFJ4-3R:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,966 | |
 | N/A | MT29F512G08EMCBBJ5-10ES:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 532 | |
 | N/A | MT29F512G08EMCBBJ5-6:B.001 | Micron Technology Inc. | IC FLASH 512GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 106 | |
 | N/A | MT29F64G08ABCBBH6-6:B TR | Micron Technology Inc. | IC FLASH 64GBIT PARALLEL 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8G x 8 Write Cycle Time Word Page: N/A | 226 | |
 | N/A | MT29F64G08ABCBBH6-6IT:B | Micron Technology Inc. | IC FLASH 64GBIT PARALLEL 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8G x 8 Write Cycle Time Word Page: N/A | 917 | |
 | N/A | MT29F64G08ABCBBH6-6IT:B TR | Micron Technology Inc. | IC FLASH 64GBIT PARALLEL 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8G x 8 Write Cycle Time Word Page: N/A | 460 | |
 | N/A | MT29F64G08ABEBBH6-12:B | Micron Technology Inc. | IC FLASH 64GBIT PARALLEL 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8G x 8 Write Cycle Time Word Page: N/A | 161 | |
 | N/A | MT29F64G08ABEBBH6-12:B TR | Micron Technology Inc. | IC FLASH 64GBIT PARALLEL 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8G x 8 Write Cycle Time Word Page: N/A | 540 | |