 | N/A | MTFC8GLWDQ-3M AIT Z | Micron Technology Inc. | IC FLASH 64GBIT MMC 100LBGA | Flash Memory | 100-LBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8G x 8 Write Cycle Time Word Page: N/A | 1,072 | |
 | N/A | MTFC8GLWDQ-3M AIT Z TR | Micron Technology Inc. | IC FLASH 64GBIT MMC 100LBGA | Flash Memory | 100-LBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8G x 8 Write Cycle Time Word Page: N/A | 1,710 | |
 | N/A | MTFC8GLXEA-WT | Micron Technology Inc. | IC FLASH 64GBIT MMC 153WFBGA | Flash Memory | 153-WFBGA (11.5x13) | 2.7V ~ 3.6V | -25°C ~ 85°C (TA) | Memory Organization: 8G x 8 Write Cycle Time Word Page: N/A | 1,447 | |
 | N/A | MTFC8GLXEA-WT TR | Micron Technology Inc. | IC FLASH 64GBIT MMC 153WFBGA | Flash Memory | 153-WFBGA (11.5x13) | 2.7V ~ 3.6V | -25°C ~ 85°C (TA) | Memory Organization: 8G x 8 Write Cycle Time Word Page: N/A | 404 | |
| N/A | N/A | MTFC8GLZDM-1M WT | Micron Technology Inc. | IC FLASH 64GBIT MMC 153TFBGA | Flash Memory | 153-TFBGA (11.5x13) | 2.7V ~ 3.6V | -25°C ~ 85°C (TA) | Memory Organization: 8G x 8 Write Cycle Time Word Page: N/A | 1,645 | |
 | N/A | N2M400FDB311A3CE | Micron Technology Inc. | IC FLSH 32GBIT MMC 52MHZ 100LBGA | Flash Memory | 100-LBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 379 | |
| N/A | N/A | N2M400FDB311A3CF TR | Micron Technology Inc. | IC FLASH 32GBIT MMC 52MHZ | Flash Memory | N/A | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 1,309 | |
| N/A | N/A | N2M400GDB321A3CE | Micron Technology Inc. | IC FLASH 64GBIT MMC 52MHZ | Flash Memory | N/A | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8G x 8 Write Cycle Time Word Page: N/A | 1,905 | |
| N/A | N/A | N2M400GDB321A3CF TR | Micron Technology Inc. | IC FLASH 64GBIT MMC 52MHZ | Flash Memory | N/A | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8G x 8 Write Cycle Time Word Page: N/A | 1,867 | |
 | N/A | N2M400JDB341A3CF | Micron Technology Inc. | IC FLASH 256GBIT MMC 100LBGA | Flash Memory | 100-LBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 32G x 8 Write Cycle Time Word Page: N/A | 1,268 | |
 | | NAND128W3A0AN6 | STMicroelectronics | IC FLASH 128MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 774 | |
 | | NAND128W3A0AN6E | STMicroelectronics | IC FLASH 128MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 333 | |
 | | NAND128W3A0AN6F | STMicroelectronics | IC FLASH 128MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 420 | |
 | N/A | NAND128W3A0BN6E | Micron Technology Inc. | IC FLASH 128MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 980 | |
 | N/A | NAND128W3A0BN6F TR | Micron Technology Inc. | IC FLASH 128MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 527 | |
 | N/A | NAND128W3A2BN6E | Micron Technology Inc. | IC FLASH 128MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 930 | |
 | N/A | NAND128W3A2BN6F TR | Micron Technology Inc. | IC FLASH 128MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 1,660 | |
 | N/A | NAND128W3A2BNXE | Micron Technology Inc. | IC FLASH 128MBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 254 | |
 | N/A | NAND128W3AABN6E | Micron Technology Inc. | IC FLASH 128MBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 255 | |
 | N/A | NAND128W3AABN6F TR | Micron Technology Inc. | IC FLASH 128MBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 343 | |