 | | NAND256W3A0AN6 | STMicroelectronics | IC FLASH 256MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 144 | |
 | | NAND256W3A0AN6E | STMicroelectronics | IC FLASH 256MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 71 | |
 | | NAND256W3A0AN6F | STMicroelectronics | IC FLASH 256MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 133 | |
 | N/A | NAND256W3A0BN6F TR | Micron Technology Inc. | IC FLASH 256MBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 1,157 | |
 | N/A | NAND256W3A2BN6E | Micron Technology Inc. | IC FLASH 256MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 264 | |
 | N/A | NAND256W3A2BN6F | STMicroelectronics | IC FLASH 256MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 369 | |
 | N/A | NAND256W3A2BN6F TR | Micron Technology Inc. | IC FLASH 256MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 1,435 | |
 | N/A | NAND256W3A2BNXE | Micron Technology Inc. | IC FLASH 256MBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 568 | |
| N/A | N/A | NAND256W3A2BZA6E | Micron Technology Inc. | IC FLASH 256MBIT PAR 55VFBGA | Flash Memory | 55-VFBGA (8x10) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 50 ns | 1,085 | |
| N/A | N/A | NAND256W3A2BZA6F TR | Micron Technology Inc. | IC FLASH 256MBIT PAR 55VFBGA | Flash Memory | 55-VFBGA (8x10) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 50 ns | 1,131 | |
| N/A | N/A | NAND256W3A2BZAXE | Micron Technology Inc. | IC FLASH 256MBIT PAR 55VFBGA | Flash Memory | 55-VFBGA (8x10) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 50 ns | 405 | |
 | | NAND256W4A0AN6E | STMicroelectronics | IC FLASH 256MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 843 | |
 | | NAND32GW3F4AN6E | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 750 | |
| N/A | | NAND512R3A2AZA6E | STMicroelectronics | IC FLASH 512MBIT PAR 55VFBGA | Flash Memory | 55-VFBGA (8x10) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 60 ns | 1,430 | |
 | | NAND512R3A2BZA6E | STMicroelectronics | IC FLASH 512MBIT PAR 63VFBGA | Flash Memory | 63-VFBGA (8.5x15) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 60 ns | 666 | |
 | | NAND512R3A2CZA6E | Micron Technology Inc. | IC FLASH 512MBIT PAR 63VFBGA | Flash Memory | 63-VFBGA (9x11) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 50 ns | 467 | |
 | N/A | NAND512R3A2DZA6E | Micron Technology Inc. | IC FLASH 512MBIT PAR 63VFBGA | Flash Memory | 63-VFBGA (9x11) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 50 ns | 705 | |
 | N/A | NAND512R3A2SN6E | Micron Technology Inc. | IC FLASH 512MBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 517 | |
 | N/A | NAND512R3A2SN6F | Micron Technology Inc. | IC FLASH 512MBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 520 | |
| N/A | N/A | NAND512R3A2SZA6E | Micron Technology Inc. | IC FLASH 512MBIT PAR 63VFBGA | Flash Memory | 63-VFBGA (9x11) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 50 ns | 855 | |