| N/A | N/A | NAND512R3A2SZA6F | Micron Technology Inc. | IC FLASH 512MBIT PAR 63VFBGA | Flash Memory | 63-VFBGA (9x11) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 50 ns | 1,145 | |
| N/A | N/A | NAND512R3A2SZAXE | Micron Technology Inc. | IC FLASH 512MBIT PAR 63VFBGA | Flash Memory | 63-VFBGA (9x11) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 50 ns | 793 | |
 | | NAND512W3A0AN6 | STMicroelectronics | IC FLASH 512MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 1,657 | |
 | | NAND512W3A0AN6E | STMicroelectronics | IC FLASH 512MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 756 | |
| N/A | | NAND512W3A0AV6E | STMicroelectronics | IC FLASH 512MBIT PARALLEL 48WSOP | Flash Memory | 48-WSOP (12x17) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 48-UFSOP (0.606",15.40mm Width) Write Cycle Time Word Page: 50 ns | 410 | |
 | | NAND512W3A2BN6E | STMicroelectronics | IC FLASH 512MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 873 | |
 | | NAND512W3A2BN6F | STMicroelectronics | IC FLASH 512MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 609 | |
 | | NAND512W3A2BZA6E | STMicroelectronics | IC FLASH 512MBIT PAR 63VFBGA | Flash Memory | 63-VFBGA (8.5x15) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 50 ns | 380 | |
 | | NAND512W3A2CN6E | Micron Technology Inc. | IC FLASH 512MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 1,074 | |
 | | NAND512W3A2CZA6E | Micron Technology Inc. | IC FLASH 512MBIT PAR 63VFBGA | Flash Memory | 63-VFBGA (9x11) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 50 ns | 1,127 | |
 | N/A | NAND512W3A2DN6E | Micron Technology Inc. | IC FLASH 512MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 1,288 | |
 | N/A | NAND512W3A2DZA6E | Micron Technology Inc. | IC FLASH 512MBIT PAR 63VFBGA | Flash Memory | 63-VFBGA (9x11) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 50 ns | 117 | |
 | N/A | NAND512W3A2SN6E | Micron Technology Inc. | IC FLASH 512MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 1,067 | |
 | N/A | NAND512W3A2SN6F TR | Micron Technology Inc. | IC FLASH 512MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 99 | |
 | N/A | NAND512W3A2SNXE | Micron Technology Inc. | IC FLASH 512MBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 244 | |
| N/A | N/A | NAND512W3A2SZA6E | Micron Technology Inc. | IC FLASH 512MBIT PAR 63VFBGA | Flash Memory | 63-VFBGA (9x11) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 50 ns | 733 | |
| N/A | N/A | NAND512W3A2SZA6F TR | Micron Technology Inc. | IC FLASH 512MBIT PAR 63VFBGA | Flash Memory | 63-VFBGA (9x11) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 50 ns | 990 | |
| N/A | N/A | NAND512W3A2SZAXE | Micron Technology Inc. | IC FLASH 512MBIT PAR 63VFBGA | Flash Memory | 63-VFBGA (9x11) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 50 ns | 1,678 | |
 | N/A | NAND512W4A0AN6E | Micron Technology Inc. | IC FLASH 512MBIT PARALLEL 48TSOP | Flash Memory | 48-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 50 ns | 1,750 | |
| N/A | | TC58NVG5H2HTA00 | Kioxia America, Inc. | 32GB SLC NAND | Flash Memory | 48-TSOP I | N/A | 0°C ~ 70°C | Memory Interface: Parallel Memory Organization: 4G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 826 | |