| N/A | | TC58NVG5H2HTAI0 | Kioxia America, Inc. | 32GB SLC NAND | Flash Memory | 48-TSOP I | N/A | -40°C ~ 85°C | Memory Interface: Parallel Memory Organization: 4G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,881 | |
 | | TH58NVG5S0FTA20 | Kioxia America, Inc. | IC FLASH 32GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 25 ns | 1,266 | |
| N/A | N/A | TH58NVG5S0FTAK0 | Kioxia America, Inc. | IC FLASH 32GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 25 ns | 1,169 | |
| N/A | | TH58NVG6H2HTA20 | Kioxia America, Inc. | 64GB SLC NAND | Flash Memory | 48-TSOP | N/A | 0°C ~ 70°C | Memory Organization: 8G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 45 | |
| N/A | | TH58NVG6H2HTAK0 | Kioxia America, Inc. | 64GB SLC NAND | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | -40°C ~ 85°C | Memory Organization: 8G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 828 | |
| N/A | | TH58TEG6H2HBA4C | Kioxia America, Inc. | 64GB SLC NAND | Flash Memory | 132-BGA | 2.7V ~ 3.6V | 0°C ~ 70°C | Memory Organization: 8G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 168 | |
| N/A | | TH58TEG8H2HBA89 | Kioxia America, Inc. | 256GB SLC NAND | Flash Memory | 132-BGA | 2.7V ~ 3.6V | 0°C ~ 70°C | Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,993 | |
| N/A | | TH58TEG8H2HBAS9 | Kioxia America, Inc. | 256GB SLC NAND | Flash Memory | 132-BGA | 2.7V ~ 3.6V | -40°C ~ 85°C | Memory Interface: eMMC_5.1 Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,667 | |
 | | THGAF8G8T23BAIL | Kioxia America, Inc. | IC FLASH 32GBIT UFS 153WFBGA | Flash Memory | 153-WFBGA (11.5x13) | 2.7V ~ 3.6V | -25°C ~ 85°C (TC) | Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 1,098 | |
 | | THGAF8G9T43BAIR | Kioxia America, Inc. | IC FLASH 64GBIT UFS 153VFBGA | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -25°C ~ 85°C (TC) | Memory Organization: 8G x 8 Write Cycle Time Word Page: N/A | 962 | |
 | | THGAF8T1T83BAIR | Kioxia America, Inc. | IC FLASH 256GBIT UFS 153VFBGA | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -25°C ~ 85°C (TC) | Memory Organization: 32G x 8 Write Cycle Time Word Page: N/A | 776 | |
 | | UFS64G-CY14-02N01 | Kingston Technology | UFS 3.1 G4 2L 153B 64GB -25c to | Flash Memory | 153-FBGA (11.5x13) | 2.4V ~ 2.7V | -25°C ~ 85°C | Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,640 | |
 | | W25N512GVBIG | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 602 | |
 | | W25N512GVBIG TR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 129 | |
 | | W25N512GVBIR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,408 | |
 | | W25N512GVBIT | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 188 | |
 | | W25N512GVBIT TR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 208 | |
 | | W25N512GVEIG | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 624 | |
 | | W25N512GVEIG TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 922 | |
 | | W25N512GVEIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 836 | |