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Total Products: 7
ImageData
Sheet
Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp
Additional SpecificationsQtyGet A
Quote
N/AN/AFM62D2G1GXA (2U)ESMT2Gb NAND+LPDDR2 MCPMCP Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
856
N/AN/AFM6BD1G12MB(2W)ESMT1Gb NAND+LPDDR2 MCP Ind.MCP Memory10.5x8 (mm),162ball2.5V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
32M x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
443
N/AN/AFM6BD2G2GKA (2Q)ESMT2Gb NAND+LPDDR2 MCPMCP Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
1,850
N/AN/AFM6BD4G2GKA (2J)ESMT4Gb NAND+LPDDR2 MCPMCP Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
1,230
N/AN/AFM6HZ4G4GKA (2R)ESMT4Gb NAND+LPDDR4x MCP Ind.MCP Memory9.5x8 (mm),149ball2.5V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
2.133 GHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
256M x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
9.5x8 (mm),149ball
1,196
N/AN/AFM6HZ4G8GXDZB (2H)ESMT4Gb NAND+LPDDR4x MCP Ind.MCP Memory9.5x8 (mm),149ball2.5V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
2.133 GHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
256M x 16 x 2 die
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
9.5x8 (mm),149ball
959
N/AN/AFM6HZ8G8GXDZB(2H)ESMT8Gb NAND+LPDDR4x MCPMCP Memory9.5x8 (mm),149ball2.5V0°C – 70°C
Memory Size:
8 Gbit
Clock Frequency:
2.133 GHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
256M x 16 x 2 die
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
9.5x8 (mm),149ball
1,329

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