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Total Products: 728
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
N/A
F59L8G81KSA-25TIG2RESMT8Gb NAND Flash Ind.Flash MemoryTSOPI-482.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8 x 2 die
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
1,264
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N/A
F59L8G81XA-25BG2YESMT8Gb NAND FlashFlash MemoryBGA-632.7V ~ 3.6V0°C – 70°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
63-BGA
479
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N/A
F59L8G81XA-25BIG2YESMT8Gb NAND Flash Ind.Flash MemoryBGA-632.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
1,023
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N/A
F59L8G81XA-25TG2YESMT8Gb NAND FlashFlash MemoryTSOPI-482.7V ~ 3.6V0°C – 70°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
1,798
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N/A
F59L8G81XA-25TIG2YESMT8Gb NAND Flash Ind.Flash MemoryTSOPI-482.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
93
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N/A
FC51E08SQP1A (2A)ESMT64Gb Memory Ind.eMMC Memory153 ball BGA2.5V-40°C – 85°C
Memory Size:
64 Gbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
N/A
Access Time:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
eMMC
Memory Organization:
8G x 8
Memory Interface:
eMMC 5.1
Grade:
Industrial
Qualification:
N/A
Packaging:
153 ball BGA
135
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N/A
FC51J32SJTS2A (2D)ESMT256Gb Memory Ind.eMMC Memory153 ball BGA2.5V-40°C – 85°C
Memory Size:
256 Gbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
N/A
Access Time:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
eMMC
Memory Organization:
32G x 8
Memory Interface:
eMMC 5.1
Grade:
Industrial
Qualification:
N/A
Packaging:
153 ball BGA
293
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N/A
FC51J32SJTS2A-2.5BWGE2DESMTeMMC Flash 3.3V 32 GByte - eMMC Flash MemoryeMMC Memory153-ball BGA2.7 V to 3.6 V-25°C to +85°C
JEDEC Standard:
eMMC Electrical Standard 5.1
LBA (Hex/ Dec):
0x039EC000 / 60,735,488
Bus Width:
 1-bit (default), 4-bit, 8-bit
Max Clock Speed Ordering:
 200 MHz (Ordering table); HS200/HS400 timing tables included
Sequential Read (HS400, 8-Bit):
 250 MB/s
Sequential Write (HS400, 8-Bit):
 210 MB/s
Memory Size:
 32 GB (31,096,569,856 bytes)
Memory Type:
eMMC Flash Memory
Operating Temperature:
 -25°C to +85°C
I/O Supply (VCCQ):
 1.70 – 1.95 V or 2.7 – 3.6 V
Storage Temperature:
 -40°C to +85°C
Boot Partition 1:
 4096 KB
Boot Partition 2:
 4096 KB
RPMB:
 4096 KB
Large Sector Size Support:
Not supported (4 KB)
Package:
 153-ball BGA
Package Dimensions:
 11.5 mm x 13.0 mm body; max height 1.0 mm
Ball Pitch:
 0.50 mm (BSC)
Pb Free:
 Yes (per ordering info)
1,797
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N/A
FC51J32SJTS2A-2.5BWGI2DESMTeMMC Flash 3.3V 32 GByte - eMMC Flash MemoryeMMC Memory153-ball BGA2.7 V to 3.6 V-40°C to +85°C
JEDEC Standard:
eMMC Electrical Standard 5.1
LBA (Hex/ Dec):
0x039EC000 / 60,735,488
Bus Width:
1-bit (default), 4-bit, 8-bit
Max Clock Speed Ordering:
200 MHz (Ordering table); HS200/HS400 timing tables included
Sequential Read (HS400, 8-Bit):
250 MB/s
Sequential Write (HS400, 8-Bit):
210 MB/s
Memory Size:
32 GB (31,096,569,856 bytes)
Memory Type:
eMMC Flash Memory
Operating Temperature:
-40°C to +85°C
I/O Supply (VCCQ):
1.70 – 1.95 V or 2.7 – 3.6 V
Storage Temperature:
-40°C to +85°C
Boot Partition 1:
4096 KB
Boot Partition 2:
4096 KB
RPMB:
4096 KB
Large Sector Size Support:
Not supported (4 KB)
Package:
153-ball BGA
Package Dimensions:
11.5 mm x 13.0 mm body; max height 1.0 mm
Ball Pitch:
0.50 mm (BSC)
Pb Free:
 Yes (per ordering info)
296
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N/AN/AFM62D1G1GMB (2G)ESMT1Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162 ball2.5V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162 ball
1,743
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N/AN/AFM62D2G1GXA (2U)ESMT2Gb NAND+LPDDR2 MCPMCP Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
856
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QUOTE
N/AN/AFM62D2G2GKA (2Q)ESMT2Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
873
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QUOTE
N/AN/AFM62D2G2GXA (2L)ESMT2Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
514
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N/AN/AFM62D4G2GXB (2V)ESMT4Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
902
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N/AN/AFM6BD1G12MB(2W)ESMT1Gb NAND+LPDDR2 MCP Ind.MCP Memory10.5x8 (mm),162ball2.5V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
32M x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
443
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N/AN/AFM6BD1G1GMB (2G)ESMT1Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162 ball2.5V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
32M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162 ball
966
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QUOTE
N/AN/AFM6BD2G2GKA (2Q)ESMT2Gb NAND+LPDDR2 MCPMCP Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
1,850
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N/AN/AFM6BD2G2GXA(2L)ESMT2Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
1,850
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QUOTE
N/AN/AFM6BD2G2GXA2LESMT2Gb NAND+LPDDR2 MCP Ind.Flash Memory10.5x8 (mm),162ball2.5V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
95
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N/AN/AFM6BD4G2GKA (2J)ESMT4Gb NAND+LPDDR2 MCPMCP Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
1,230
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