| N/A | | M12L2561616A-7T(2T) | ESMT | 256Mb SDRAM | DRAM Memory | 54 pin TSOPII/ 54 Ball FBGA | 2.5V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 16M x 16 Memory Interface: Parallel Packaging: 54 pin TSOPII/ 54 Ball FBGA | 727 | |
| N/A | | M12L2561616A-7TG2T | ESMT | 256Mb SDRAM | DRAM Memory | TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 793 | |
| N/A | | M12L5121632A-5B(2T) | ESMT | 512Mb SDRAM | DRAM Memory | 54 pin TSOPII/ 54 Ball FBGA | 2.5V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 32M x 16 Memory Interface: Parallel Packaging: 54 pin TSOPII/ 54 Ball FBGA | 471 | |
| N/A | | M12L5121632A-5BG2T | ESMT | 512Mb SDRAM | DRAM Memory | BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 672 | |
| N/A | | M12L5121632A-5T(2T) | ESMT | 512Mb SDRAM | DRAM Memory | 54 pin TSOPII/ 54 Ball FBGA | 2.5V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 32M x 16 Memory Interface: Parallel Packaging: 54 pin TSOPII/ 54 Ball FBGA | 896 | |
| N/A | | M12L5121632A-5TG2T | ESMT | 512Mb SDRAM | DRAM Memory | TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 997 | |
| N/A | | M12L5121632A-6B(2T) | ESMT | 512Mb SDRAM | DRAM Memory | 54 pin TSOPII/ 54 Ball FBGA | 2.5V | 0°C – 70°C | Write Cycle Time Word Page: 12 ns Memory Organization: 32M x 16 Memory Interface: Parallel Packaging: 54 pin TSOPII/ 54 Ball FBGA | 451 | |
| N/A | | M12L5121632A-6BG2T | ESMT | 512Mb SDRAM | DRAM Memory | BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 12 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 641 | |
| N/A | | M12L5121632A-6T(2T) | ESMT | 512Mb SDRAM | DRAM Memory | 54 pin TSOPII/ 54 Ball FBGA | 2.5V | 0°C – 70°C | Write Cycle Time Word Page: 12 ns Memory Organization: 32M x 16 Memory Interface: Parallel Packaging: 54 pin TSOPII/ 54 Ball FBGA | 1,839 | |
| N/A | | M12L5121632A-6TG2T | ESMT | 512Mb SDRAM | DRAM Memory | TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 12 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 844 | |
| N/A | | M12L5121632A-7B(2T) | ESMT | 512Mb SDRAM | DRAM Memory | 54 pin TSOPII/ 54 Ball FBGA | 2.5V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 32M x 16 Memory Interface: Parallel Packaging: 54 pin TSOPII/ 54 Ball FBGA | 1,398 | |
| N/A | | M12L5121632A-7BG2T | ESMT | 512Mb SDRAM | DRAM Memory | BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 1,277 | |
| N/A | | M12L5121632A-7T(2T) | ESMT | 512Mb SDRAM | DRAM Memory | 54 pin TSOPII/ 54 Ball FBGA | 2.5V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 32M x 16 Memory Interface: Parallel Packaging: 54 pin TSOPII/ 54 Ball FBGA | 933 | |
| N/A | | M12L5121632A-7TG2T | ESMT | 512Mb SDRAM | DRAM Memory | TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 343 | |
| N/A | | M12L64164A-5B(2C) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 54 TSOPII/ 54 VBGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 10 ns Memory Organization: 4M x 16 Memory Interface: Parallel Packaging: 54 TSOPII/ 54 VBGA | 1,432 | |
| N/A | | M12L64164A-5BG2C | ESMT | 64Mb SDRAM | DRAM Memory | 54-VBGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 567 | |
| N/A | | M12L64164A-5T(2C) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 54 TSOPII/ 54 VBGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 10 ns Memory Organization: 4M x 16 Memory Interface: Parallel Packaging: 54 TSOPII/ 54 VBGA | 1,704 | |
| N/A | | M12L64164A-5TG2C | ESMT | 64Mb SDRAM | DRAM Memory | 54-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 395 | |
| N/A | | M12L64164A-7B(2C) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 54 TSOPII/ 54 VBGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 14 ns Memory Organization: 4M x 16 Memory Interface: Parallel Packaging: 54 TSOPII/ 54 VBGA | 607 | |
| N/A | | M12L64164A-7BG2C | ESMT | 64Mb SDRAM | DRAM Memory | 54-VBGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 220 | |