| N/A | | M15T4G8512A-EFBG2S | ESMT | 4Gb DDR3L SDRAM Auto. | DRAM Memory | 78 Ball BGA | 1.35V, 1.5V | -40°C – 105°C | Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 512M x 8 Memory Interface: Parallel | 533 | |
| N/A | | M15T5121632A-BDBG | ESMT | 512Mb DDR3L SDRAM | DRAM Memory | 96 Ball BGA | 1.35V, 1.5V | 0°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 16 Memory Interface: Parallel | 1,329 | |
| N/A | | M15T5121632A-DEBG | ESMT | 512Mb DDR3L SDRAM | DRAM Memory | 96 Ball BGA | 1.35V, 1.5V | 0°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 16 Memory Interface: Parallel | 491 | |
| N/A | | M15T8G16512A-BDBG2S | ESMT | 8Gb DDR3L SDRAM Auto. | DRAM Memory | 96 Ball BGA | 1.35V, 1.5V | -40°C – 105°C | Write Cycle Time Word Page: 15 ns Memory Organization: 512M x 16 Memory Interface: Parallel | 1,484 | |
| N/A | | M15T8G16512A-DEBG2S | ESMT | 8Gb DDR3L SDRAM Auto. | DRAM Memory | 96 Ball BGA | 1.35V, 1.5V | -40°C – 105°C | Write Cycle Time Word Page: 15 ns Memory Organization: 512M x 16 Memory Interface: Parallel | 658 | |
| N/A | | M15T8G16512A-EFBG2S | ESMT | 8Gb DDR3L SDRAM Auto. | DRAM Memory | 96 Ball BGA | 1.35V, 1.5V | -40°C – 105°C | Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 512M x 16 Memory Interface: Parallel | 1,732 | |
| N/A | N/A | M16U4G16256A (2Z) | ESMT | 4Gb DDR4 SDRAM Auto. | DRAM Memory | 96 Ball BGA | 2.5V | -40°C – 105°C | Write Cycle Time Word Page: 15 ns Memory Organization: 256M x 16 Memory Interface: Parallel | 1,313 | |
| N/A | | M16U4G16256A-2400 | ESMT | 4Gb DDR4 SDRAM Ind. | DRAM Memory | 96 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 256M x 16 Memory Interface: Parallel | 636 | |
| N/A | | M16U4G16256A-2666 | ESMT | 4Gb DDR4 SDRAM Ind. | DRAM Memory | 96 Ball BGA | 2.5V | -40°C – 85°C | Clock Frequency: 1.333 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 256M x 16 Memory Interface: Parallel | 473 | |
| N/A | | M16U4G16256A-2666(2Z) | ESMT | 4Gb DDR4 SDRAM Auto. | DRAM Memory | 96 Ball BGA | 2.5V | -40°C – 105°C | Clock Frequency: 1.333 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 256M x 16 Memory Interface: Parallel | 397 | |
| N/A | | M16U4G16256A-3200 | ESMT | 4Gb DDR4 SDRAM Ind. | DRAM Memory | 96 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 256M x 16 Memory Interface: Parallel | 771 | |
| N/A | | M16U4G16256A-3200(2Z) | ESMT | 4Gb DDR4 SDRAM Auto. | DRAM Memory | 96 Ball BGA | 2.5V | -40°C – 105°C | Write Cycle Time Word Page: 15 ns Memory Organization: 256M x 16 Memory Interface: Parallel | 622 | |
| N/A | | M16U4G8512A-2666(2Z) | ESMT | 4Gb DDR4 SDRAM Ind. | DRAM Memory | 78 Ball BGA | 2.5V | -40°C – 95°C | Clock Frequency: 1.333 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 512M x 8 Memory Interface: Parallel | 1,920 | |
| N/A | | M16U4G8512A-3200(2Z) | ESMT | 4Gb DDR4 SDRAM Ind. | DRAM Memory | 78 Ball BGA | 2.5V | -40°C – 95°C | Write Cycle Time Word Page: 15 ns Memory Organization: 512M x 8 Memory Interface: Parallel | 1,249 | |
| N/A | N/A | M24D6488CA (2A) | ESMT | Octal PSRAM | DRAM Memory | 24 ball BGA | 2.5V | N/A | Write Cycle Time Word Page: N/A Memory Organization: 8M x 8 Memory Interface: Parallel | 375 | |
| N/A | N/A | M24D6488PA (2A) | ESMT | PSRAM Ind. | DRAM Memory | 24 ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: N/A Memory Organization: 8M x 8 Memory Interface: Parallel | 754 | |
| N/A | N/A | M24L6488CA (2A) | ESMT | Octal PSRAM Ind. | DRAM Memory | 24 ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: N/A Memory Organization: 8M x 8 Memory Interface: Parallel | 750 | |
| N/A | | M52D2561616A-5BG2F | ESMT | 256Mb SDRAM | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 4M x 16 | 127 | |
| N/A | | M52D2561616A-5BIG2F | ESMT | 256Mb SDRAM Ind. | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 10 ns Memory Organization: 4M x 16 | 1,294 | |
| N/A | | M52D2561616A-6BG2F | ESMT | 256Mb SDRAM | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 12 ns Memory Organization: 4M x 16 | 864 | |