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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
| N/A | M52D2561616A-6BIG2F | ESMT | 256Mb SDRAM Ind. | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | -40°C – 85°C | Memory Size: 256 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5.4 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: LVCMOS Grade: Industrial Qualification: JEDEC Packaging: 54-FBGA | 566 | ||
| N/A | M52D2561616A-7BG2F | ESMT | 256Mb SDRAM | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 54-FBGA | 1,277 | ||
| N/A | M52D2561616A-7BIG2F | ESMT | 256Mb SDRAM Ind. | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | -40°C – 85°C | Memory Size: 256 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: LVCMOS Grade: Industrial Qualification: JEDEC Packaging: 54-FBGA | 38 | ||
| N/A | M52D256328A-6BG2F | ESMT | 256Mb SDRAM | DRAM Memory | 90-FBGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5.4 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 2M x 32 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 90-FBGA | 897 | ||
| N/A | M52D256328A-7BG2F | ESMT | 256Mb SDRAM | DRAM Memory | 90-FBGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 2M x 32 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 90-FBGA | 1,378 | ||
| N/A | M52D5121632A-5BG | ESMT | 512Mb SDRAM | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 512 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 4.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 8M x 16 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 54-FBGA | 236 | ||
| N/A | M52D5121632A-5BIG | ESMT | 512Mb SDRAM Ind. | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | -40°C – 85°C | Memory Size: 512 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 4.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 8M x 16 Memory Interface: LVCMOS Grade: Industrial Qualification: JEDEC Packaging: 54-FBGA | 1,040 | ||
| N/A | M52D5121632A-6BG | ESMT | 512Mb SDRAM | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 512 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 8M x 16 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 54-FBGA | 616 | ||
| N/A | M52D5121632A-6BIG | ESMT | 512Mb SDRAM Ind. | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | -40°C – 85°C | Memory Size: 512 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 8M x 16 Memory Interface: LVCMOS Grade: Industrial Qualification: JEDEC Packaging: 54-FBGA | 407 | ||
| N/A | M52D5121632A-7BG | ESMT | 512Mb SDRAM | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 512 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 8M x 16 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 54-FBGA | 1,630 | ||
| N/A | M52D5121632A-7BIG | ESMT | 512Mb SDRAM Ind. | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | -40°C – 85°C | Memory Size: 512 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 8M x 16 Memory Interface: LVCMOS Grade: Industrial Qualification: JEDEC Packaging: 54-FBGA | 102 | ||
| N/A | M52D5123216A-5BG | ESMT | 512Mb SDRAM | DRAM Memory | 90-BGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 512 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 4.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 32 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 90-BGA | 189 | ||
| N/A | M52D5123216A-6BG | ESMT | 512Mb SDRAM | DRAM Memory | 90-BGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 512 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 32 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 90-BGA | 810 | ||
| N/A | M52D5123216A-6BIG | ESMT | 512Mb SDRAM Ind. | DRAM Memory | 90-BGA (8x13) | 1.7V ~ 1.95V | -40°C – 85°C | Memory Size: 512 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 32 Memory Interface: LVCMOS Grade: Industrial Qualification: JEDEC Packaging: 90-BGA | 567 | ||
| N/A | M52D5123216A-7BG | ESMT | 512Mb SDRAM | DRAM Memory | 90-BGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 512 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 32 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 90-BGA | 870 | ||
| N/A | M52D5123216A-7BIG | ESMT | 512Mb SDRAM Ind. | DRAM Memory | 90-BGA (8x13) | 1.7V ~ 1.95V | -40°C – 85°C | Memory Size: 512 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 32 Memory Interface: LVCMOS Grade: Industrial Qualification: JEDEC Packaging: 90-BGA | 1,377 | ||
| N/A | N/A | M52D64322A (2S) | ESMT | 64Mb SDRAM | DRAM Memory | 54 Ball FBGA | 2.5V | 0°C – 70°C | Memory Size: 64 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 15 ns Access Time: N/A Memory Type: Volatile Memory Format: DRAM Technology: LPSDR SDRAM Memory Organization: 2M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 54 Ball FBGA | 393 | |
| N/A | M53D2561616A-5BG2F | ESMT | 256Mb LPDDR SDRAM | DRAM Memory | 60-BGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 15 ns Access Time: 5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 60-UFBGA | 786 | ||
| N/A | M53D2561616A-6BG2F | ESMT | 256Mb LPDDR SDRAM | DRAM Memory | 60-BGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 60-UFBGA | 696 | ||
| N/A | M53D2561616A-7.5BG2F | ESMT | 256Mb LPDDR SDRAM | DRAM Memory | 60-BGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 133 MHz Write Cycle Time Word Page: 15 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 60-UFBGA | 922 |
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