Electronic Parts Search

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Total Products: 728
ImageData
Sheet
Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp
Additional SpecificationsQtyGet A
Quote
N/AM55D4G32128A-EEBIG2RESMT4Gb LPDDR3 SDRAM Ind.DRAM Memory178-BGA (10x11.5)1.14V ~ 1.30V, 1.70V ~ 1.95V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
933 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
5.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
128M x 32
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
178-BGA
1,425
N/AM55D4G32128A-GFBG2RESMT4Gb LPDDR3 SDRAMDRAM Memory178-BGA (10x11.5)1.14V ~ 1.30V, 1.70V ~ 1.95V-25°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
1.066 GHz
Write Cycle Time Word Page:
15 ns
Access Time:
5.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
128M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
178-BGA
235
N/AM55D4G32128A-GFBIG2RESMT4Gb LPDDR3 SDRAM Ind.DRAM Memory178-BGA (10x11.5)1.14V ~ 1.30V, 1.70V ~ 1.95V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
1.066 GHz
Write Cycle Time Word Page:
15 ns
Access Time:
5.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
128M x 32
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
178-BGA
367
N/AM56Z4G16256A (2H)ESMT4Gb LPDDR4x SDRAM Ind.DRAM Memory200 Ball BGA1.7V ~ 1.95V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
2.133 GHz
Write Cycle Time Word Page:
18 ns
Access Time:
3.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM - LPDDR4X
Memory Organization:
256M x 16
Memory Interface:
LPDDR4X
Grade:
Industrial
Qualification:
JEDEC
Packaging:
200 Ball BGA
1,217
N/AM56Z4G16256A2HESMT4Gb LPDDR4x SDRAMDRAM Memory200 Ball BGA1.70V ~ 1.95V-25°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
2.133 GHz
Write Cycle Time Word Page:
18 ns
Access Time:
3.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM - LPDDR4X
Memory Organization:
256M x 16
Memory Interface:
LPDDR4X
Grade:
Commercial
Qualification:
JEDEC
Packaging:
200 Ball BGA
616
N/AN/AM56Z8G16512A (2H)ESMT8Gb LPDDR4x SDRAM Ind.DRAM Memory200 Ball BGA2.5V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
2.133 GHz
Write Cycle Time Word Page:
18 ns
Access Time:
3.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
LPDDR4x SDRAM
Memory Organization:
512M x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
200 Ball BGA
418
N/AM56Z8G32256AESMT8Gb LPDDR4x SDRAMDRAM Memory200 Ball BGA1.70V ~ 1.95V-25°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
1.866 GHz
Write Cycle Time Word Page:
18 ns
Access Time:
3.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM - LPDDR4X
Memory Organization:
256M x 32
Memory Interface:
LPDDR4X
Grade:
Commercial
Qualification:
JEDEC
Packaging:
200 Ball BGA
504
N/AM56Z8G32256A (2H)ESMT8Gb LPDDR4x SDRAMDRAM Memory200 Ball BGA1.70V ~ 1.95V-25°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
2.133 GHz
Write Cycle Time Word Page:
18 ns
Access Time:
3.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM - LPDDR4X
Memory Organization:
256M x 32
Memory Interface:
LPDDR4X
Grade:
Commercial
Qualification:
JEDEC
Packaging:
200 Ball BGA
529

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