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Total Products: 728
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Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp
Additional SpecificationsQtyGet A
Quote
N/AF59D1G81LB-45BCIG2MESMT1Gb NAND Flash Ind.Flash MemoryBGA-671.7V ~ 1.95V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
67-BGA
366
N/AF59D1G81LB-45BG2MESMT1Gb NAND FlashFlash MemoryBGA-631.7V ~ 1.95V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
63-BGA
676
N/AF59D1G81LB-45BIG2MESMT1Gb NAND Flash Ind.Flash MemoryBGA-631.7V ~ 1.95V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
14
N/AF59D1G81LB-45TG2MESMT1Gb NAND FlashFlash MemoryTSOPI-481.7V ~ 1.95V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
128
N/AF59D1G81LB-45TIG2MESMT1Gb NAND Flash Ind.Flash MemoryTSOPI-481.7V ~ 1.95V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
562
N/AF59D1G81LB-IP(2M)ESMT1Gb NAND Flash Ind.Flash Memory48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA2.5V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA
764
N/AF59D1G81LB&F59D1G161LB-IP(2M)ESMT1Gb NAND Flash Ind.Flash Memory48 pin TSOPI; 63/ 67 Ball BGA2.5V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
1G x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48 pin TSOPI; 63/ 67 Ball BGA
1,396
N/AF59D1G81MB-45BCG2MESMT1Gb NAND FlashFlash MemoryBGA-671.7V ~ 1.95V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
67-BGA
6
N/AF59D1G81MB-45BCIG2MESMT1Gb NAND Flash Ind.Flash MemoryBGA-671.7V ~ 1.95V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
67-BGA
1,694
N/AF59D1G81MB-45BG2MESMT1Gb NAND FlashFlash MemoryBGA-631.7V ~ 1.95V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
63-BGA
554
N/AF59D1G81MB-45BIG2MESMT1Gb NAND Flash Ind.Flash MemoryBGA-631.7V ~ 1.95V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
572
N/AF59D1G81MB-45TG2MESMT1Gb NAND FlashFlash MemoryTSOPI-481.7V ~ 1.95V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
622
N/AF59D1G81MB-45TIG2MESMT1Gb NAND Flash Ind.Flash MemoryTSOPI-481.7V ~ 1.95V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
295
N/AF59D1G81MB-IP(2M)ESMT1Gb NAND Flash Ind.Flash Memory48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA2.5V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA
986
N/AF59D1G81MB&F59D1G161MB-IP(2M)ESMT1Gb NAND Flash Ind.Flash Memory48 pin TSOPI; 48/ 63/ 67 Ball BGA2.5V-40°C – 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
350 µs
Access Time:
30 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48 pin TSOPI; 48/ 63/ 67 Ball BGA
406
N/AN/AF59D2G81KA (2N)ESMT2Gb NAND Flash Auto.Flash Memory48 Pin TSOP/ 63 Ball BGA/ 67 Ball BGA1.7V ~ 1.95V-40°C – 105°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
48 Pin TSOP/ 63 Ball BGA/ 67 Ball BGA
276
N/AF59D2G81KA-45BCG2NESMT2Gb NAND FlashFlash MemoryBGA-671.7V ~ 1.95V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
67-BGA
42
N/AF59D2G81KA-45BCIAG2NESMT2Gb NAND Flash Auto.Flash MemoryBGA-671.7V ~ 1.95V-40°C – 105°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
67-BGA
1,070
N/AF59D2G81KA-45BCIG2NESMT2Gb NAND Flash Ind.Flash MemoryBGA-671.7V ~ 1.95V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
67-BGA
187
N/AF59D2G81KA-45BG2NESMT2Gb NAND FlashFlash MemoryBGA-631.7V ~ 1.95V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
25 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
63-BGA
1,345

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