| N/A | N/A | FM6BD4G2GXB(2V) | ESMT | 4Gb NAND+LPDDR2 MCP | Flash Memory | 10.5x8 (mm),162ball | 2.5V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Type: Volatile, Non-Volatile Technology: MCP (NAND + DRAM) Memory Organization: 64M x 32 Memory Interface: Parallel Packaging: 10.5x8 (mm),162ball | 303 | |
| N/A | N/A | FM6BD4G4GKMA (2J) | ESMT | 4Gb NAND+LPDDR2 MCP | Flash Memory | 10.5x8 (mm),162 ball | 2.5V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Type: Volatile, Non-Volatile Technology: MCP (NAND + DRAM) Memory Organization: 128M x 32 Memory Interface: Parallel Packaging: 10.5x8 (mm),162 ball | 12 | |
| N/A | N/A | FM6BD4G4GXMB (2V) | ESMT | 4Gb NAND+LPDDR2 MCP | Flash Memory | 10.5x8 (mm),162 ball | 2.5V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Type: Volatile, Non-Volatile Technology: MCP (NAND + DRAM) Memory Organization: 128M x 32 Memory Interface: Parallel Packaging: 10.5x8 (mm),162 ball | 784 | |
| N/A | N/A | FM6HZ4G4GKA (2R) | ESMT | 4Gb NAND+LPDDR4x MCP Ind. | MCP Memory | 9.5x8 (mm),149ball | 2.5V | -40°C – 85°C | Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 15 ns Memory Type: Volatile, Non-Volatile Technology: MCP (NAND + DRAM) Memory Organization: 256M x 16 Memory Interface: Parallel Packaging: 9.5x8 (mm),149ball | 1,196 | |
| N/A | N/A | FM6HZ4G4GXB | ESMT | 4Gb NAND+LPDDR4x MCP | Flash Memory | 9.5x8 (mm),149ball | 2.5V | 0°C – 70°C | Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 15 ns Memory Type: Volatile, Non-Volatile Technology: MCP (NAND + DRAM) Memory Organization: 256M x 16 Memory Interface: Parallel Packaging: 9.5x8 (mm),149ball | 809 | |
| N/A | N/A | FM6HZ4G8GXDZB (2H) | ESMT | 4Gb NAND+LPDDR4x MCP Ind. | MCP Memory | 9.5x8 (mm),149ball | 2.5V | -40°C – 85°C | Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 15 ns Memory Type: Volatile, Non-Volatile Technology: MCP (NAND + DRAM) Memory Organization: 256M x 16 x 2 die Memory Interface: Parallel Packaging: 9.5x8 (mm),149ball | 959 | |
| N/A | N/A | FM6HZ8G8GKDZA (2R) | ESMT | 8Gb NAND+LPDDR4x MCP Auto. | Flash Memory | 9.5x8 (mm),149ball | 2.5V | -40°C – 105°C | Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 15 ns Memory Type: Volatile, Non-Volatile Technology: MCP (NAND + DRAM) Memory Organization: 256M x 16 x 2 die Memory Interface: Parallel Packaging: 9.5x8 (mm),149ball | 1,509 | |
| N/A | N/A | FM6HZ8G8GXDZB(2H) | ESMT | 8Gb NAND+LPDDR4x MCP | MCP Memory | 9.5x8 (mm),149ball | 2.5V | 0°C – 70°C | Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 15 ns Memory Type: Volatile, Non-Volatile Technology: MCP (NAND + DRAM) Memory Organization: 256M x 16 x 2 die Memory Interface: Parallel Packaging: 9.5x8 (mm),149ball | 1,329 | |
| N/A | N/A | KGD-128Mbx16-LPDDR2-SDRAM-1.2/1.8V | ESMT | LPDDR2 SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Write Cycle Time Word Page: N/A Memory Organization: 128M x 16 Memory Interface: Parallel | 398 | |
| N/A | N/A | KGD-128Mbx16-LPDDR3-SDRAM-1.2V | ESMT | LPDDR3 SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Write Cycle Time Word Page: N/A Memory Organization: 128M x 16 Memory Interface: Parallel | 1,591 | |
| N/A | N/A | KGD-128Mbx16/-256Mbx8-DDR3-1.35/1.5V | ESMT | DDR3 SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Write Cycle Time Word Page: N/A Memory Organization: 128M x 16 / 256M x 8 Memory Interface: Parallel | 985 | |
| N/A | N/A | KGD-128Mbx32-LPDDR3-SDRAM-1.2V | ESMT | LPDDR3 SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Write Cycle Time Word Page: N/A Memory Organization: 128M x 32 Memory Interface: Parallel | 999 | |
| N/A | N/A | KGD-128Mbx8-SLC-NAND-Flash,-x8,-1.8V/3V | ESMT | NAND Flash KGD | Flash Memory | N/A | 2.5V | N/A | Write Cycle Time Word Page: N/A Technology: SLC NAND Flash Memory Organization: 128M x 8 Memory Interface: Parallel | 1,426 | |
| N/A | N/A | KGD-16Mbx16-DDR-II-SDRAM-1.8V | ESMT | DDR2 SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Write Cycle Time Word Page: N/A Memory Organization: 16M x 16 Memory Interface: Parallel | 554 | |
| N/A | N/A | KGD-16Mbx16-DDR-SDRAM-1.8V/2.5V | ESMT | DDR SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Write Cycle Time Word Page: N/A Memory Organization: 16M x 16 Memory Interface: Parallel | 1,535 | |
| N/A | N/A | KGD-16Mbx16-LPDDR-SDRAM-1.8V | ESMT | LPDDR SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Write Cycle Time Word Page: N/A Memory Organization: 16M x 16 Memory Interface: Parallel | 481 | |
| N/A | N/A | KGD-16Mbx16-LPSDR-SDRAM-1.8V | ESMT | SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Write Cycle Time Word Page: N/A Memory Organization: 16M x 16 Memory Interface: Parallel | 1,048 | |
| N/A | N/A | KGD-16Mbx16-SDRAM-2.5V/3.3V | ESMT | SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Write Cycle Time Word Page: N/A Memory Organization: 16M x 16 Memory Interface: Parallel | 826 | |
| N/A | N/A | KGD-16Mbx32-LPDDR-SDRAM-1.8V | ESMT | LPDDR SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Write Cycle Time Word Page: N/A Memory Organization: 16M x 32 Memory Interface: Parallel | 534 | |
| N/A | N/A | KGD-16Mbx32-LPDDR2-SDRAM-1.2V/1.8V | ESMT | LPDDR2 SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Write Cycle Time Word Page: N/A Memory Organization: 16M x 32 Memory Interface: Parallel | 129 | |