| N/A | | M12L64164A-7T(2C) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 54 TSOPII/ 54 VBGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 14 ns Memory Organization: 4M x 16 Memory Interface: Parallel Packaging: 54 TSOPII/ 54 VBGA | 620 | |
| N/A | | M12L64164A-7TG2C | ESMT | 64Mb SDRAM | DRAM Memory | 54-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 205 | |
| N/A | | M12L64322A (2S) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 86 TSOPII/ 90 BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 32 Memory Interface: Parallel Packaging: 86 TSOPII/ 90 BGA | 964 | |
| N/A | | M12L64322A-5BG2S | ESMT | 64Mb SDRAM | DRAM Memory | 90-BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 561 | |
| N/A | | M12L64322A-5TG2S | ESMT | 64Mb SDRAM | DRAM Memory | 86-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 17 | |
| N/A | | M12L64322A-6BG2S | ESMT | 64Mb SDRAM | DRAM Memory | 90-BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 12 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 1,095 | |
| N/A | | M12L64322A-6TG2S | ESMT | 64Mb SDRAM | DRAM Memory | 86-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 12 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 1,586 | |
| N/A | | M12L64322A-7BG2S | ESMT | 64Mb SDRAM | DRAM Memory | 90-BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 1,644 | |
| N/A | | M12L64322A-7TG2S | ESMT | 64Mb SDRAM | DRAM Memory | 86-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 63 | |
| N/A | | M13D64322A-4.5BG2S | ESMT | 64Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 512K x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 702 | |
| N/A | | M13D64322A-4BG2S | ESMT | 64Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 512K x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 1,490 | |
| N/A | | M13D64322A-5BG2S | ESMT | 64Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 512K x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 1,632 | |
| N/A | | M13S128168A-4.5BG2S | ESMT | 128Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 16 Memory Interface: Parallel | 21 | |
| N/A | | M13S128168A-4.5TG2S | ESMT | 128Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 16 Memory Interface: Parallel | 1,783 | |
| N/A | | M13S128168A-4BG2S | ESMT | 128Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 16 Memory Interface: Parallel | 749 | |
| N/A | | M13S128168A-4TG2S | ESMT | 128Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 16 Memory Interface: Parallel | 1,491 | |
| N/A | | M13S128168A-5BG2S | ESMT | 128Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 16 Memory Interface: Parallel | 60 | |
| N/A | | M13S128168A-5TG2S | ESMT | 128Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 16 Memory Interface: Parallel | 131 | |
| N/A | | M13S128168A-6BG2S | ESMT | 128Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 16 Memory Interface: Parallel | 1,544 | |
| N/A | | M13S128168A-6TG2S | ESMT | 128Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 16 Memory Interface: Parallel | 1,166 | |