| N/A | | M13S128324A-3.6BIG2M | ESMT | 128Mb DDR SDRAM Ind. | DRAM Memory | 144-FBGA | 2.5V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 32 Memory Interface: Parallel | 366 | |
| N/A | | M13S128324A-4BIG2M | ESMT | 128Mb DDR SDRAM Ind. | DRAM Memory | 144-FBGA | 2.375V ~ 2.625V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 32 Memory Interface: Parallel | 445 | |
| N/A | | M13S128324A-5BIG2M | ESMT | 128Mb DDR SDRAM Ind. | DRAM Memory | 144-FBGA | 2.375V ~ 2.625V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 32 Memory Interface: Parallel | 932 | |
| N/A | | M13S128324A-6BIG2M | ESMT | 128Mb DDR SDRAM Ind. | DRAM Memory | 144-FBGA | 2.375V ~ 2.625V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 32 Memory Interface: Parallel | 506 | |
| N/A | | M13S2561616A-4BG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 467 | |
| N/A | | M13S2561616A-4BIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 745 | |
| N/A | | M13S2561616A-4TG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 1,651 | |
| N/A | | M13S2561616A-4TIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 1,110 | |
| N/A | | M13S2561616A-5BG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 894 | |
| N/A | | M13S2561616A-5BIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 1,210 | |
| N/A | | M13S2561616A-5TG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 15 | |
| N/A | | M13S2561616A-5TIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 625 | |
| N/A | | M13S2561616A-6BG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 355 | |
| N/A | | M13S2561616A-6BIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 866 | |
| N/A | | M13S2561616A-6TG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 784 | |
| N/A | | M13S2561616A-6TIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 887 | |
| N/A | | M13S5121632A-5TG2T | ESMT | 512Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 1,868 | |
| N/A | | M13S5121632A-5TIG2T | ESMT | 512Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 888 | |
| N/A | | M13S5121632A-6TG2T | ESMT | 512Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 461 | |
| N/A | | M13S5121632A-6TIG2T | ESMT | 512Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 399 | |