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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | IS42S16160L-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 779 | ||
 | IS42S16160L-6BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,442 | ||
 | IS42S16160L-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 45 | ||
 | IS42S16160L-6TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,397 | ||
 | IS42S16160L-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,112 | ||
 | IS42S16160L-6TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 757 | ||
 | IS42S16160L-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 455 | ||
 | IS42S16160L-7BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 953 | ||
 | IS42S16160L-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 816 | ||
 | IS42S16160L-7BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,537 | ||
 | IS42S16160L-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,132 | ||
 | IS42S16160L-7TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 371 | ||
 | IS42S16160L-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 90 | ||
 | IS42S16160L-7TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,273 | ||
 | IS42S16160L-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 250 | ||
 | IS42S16320B-6BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 54WBGA | DRAM Memory | 54-WBGA (11x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 343 | ||
 | IS42S16320B-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 54WBGA | DRAM Memory | 54-WBGA (11x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,655 | ||
 | IS42S16320B-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 54WBGA | DRAM Memory | 54-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 493 | ||
 | IS42S16320B-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 54WBGA | DRAM Memory | 54-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 529 | ||
 | IS42S16320B-6TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 434 |
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