 | | IS42S32800J-75ETL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 428 | |
 | | IS42S32800J-75ETL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 458 | |
 | | IS42S32800J-75ETLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,560 | |
 | | IS42S32800J-75ETLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 670 | |
 | | IS42S32800J-7BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 402 | |
 | | IS42S32800J-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 1,094 | |
 | | IS42S32800J-7BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 56 | |
 | | IS42S32800J-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 244 | |
 | | IS42S32800J-7TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,271 | |
 | | IS42S32800J-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 123 | |
 | | IS42S32800J-7TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 401 | |
 | | IS42S32800J-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 126 | |
 | | IS42S32800L-6BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 427 | |
 | | IS42S32800L-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 1,818 | |
 | | IS42S32800L-6BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 430 | |
 | | IS42S32800L-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 761 | |
 | | IS42S32800L-6TL | Integrated Silicon Solution Inc | 256M, 3.3V, SDRAM, 8MX32, 166MHZ | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,175 | |
 | | IS42S32800L-6TL-TR | Integrated Silicon Solution Inc | 256M, 3.3V, SDRAM, 8MX32, 166MHZ | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 836 | |
 | | IS42S32800L-6TLI | Integrated Silicon Solution Inc | 256M, 3.3V, SDRAM, 8MX32, 166MHZ | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 679 | |
 | | IS42S32800L-6TLI-TR | Integrated Silicon Solution Inc | 256M, 3.3V, SDRAM, 8MX32, 166MHZ | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 274 | |