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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | IS43DR16320E-3DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 358 | ||
 | IS43DR86400C-3DBI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,899 | ||
 | IS43DR86400C-3DBI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 858 | ||
| N/A | IS43DR86400D-3DBL | Integrated Silicon Solution Inc | 512M, 1.8V, DDR2, 64MX8, 333MHZ | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: SSTL_18 Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,475 | ||
| N/A | IS43DR86400D-3DBL-TR | Integrated Silicon Solution Inc | 512M, 1.8V, DDR2, 64MX8, 333MHZ | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: SSTL_18 Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 923 | ||
 | IS43DR86400E-25DBL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,043 | ||
 | IS43DR86400E-25DBL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: SSTL_18 Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 998 | ||
 | IS43DR86400E-25DBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,282 | ||
 | IS43DR86400E-25DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 302 | ||
 | IS43DR86400E-3DBL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,043 | ||
 | IS43DR86400E-3DBL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: SSTL_18 Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,141 | ||
 | IS43DR86400E-3DBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,739 | ||
 | IS43DR86400E-3DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 460 | ||
 | N/A | IS43LQ32K01S2A-046BLI | Integrated Silicon Solution Inc | IC DRAM 32G LVSTL 2.1GHZ TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 0.57V ~ 0.65V, 1.06V ~ 1.17V, 1.70V ~ 1.95V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: LVSTL Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 463 | |
 | N/A | IS43LQ32K01S2A-046BLI-TR | Integrated Silicon Solution Inc | 32G, 1.06-1.17/1.70-1.95V, LPDDR | DRAM Memory | 200-TFBGA (10x14.5) | 0.57V ~ 0.65V, 1.06V ~ 1.17V, 1.70V ~ 1.95V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: LVSTL Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 166 | |
 | N/A | IS43LQ32K01S2A-053BLI | Integrated Silicon Solution Inc | 32G, 1.06-1.17/1.70-1.95V, LPDDR | DRAM Memory | 200-TFBGA (10x14.5) | 0.57V ~ 0.65V, 1.06V ~ 1.17V, 1.70V ~ 1.95V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 1.866 GHz Grade: Automotive Memory Format: DRAM Memory Interface: LVSTL Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 244 | |
 | N/A | IS43LQ32K01S2A-053BLI-TR | Integrated Silicon Solution Inc | 32G, 1.06-1.17/1.70-1.95V, LPDDR | DRAM Memory | 200-TFBGA (10x14.5) | 0.57V ~ 0.65V, 1.06V ~ 1.17V, 1.70V ~ 1.95V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 1.866 GHz Grade: Automotive Memory Format: DRAM Memory Interface: LVSTL Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 554 | |
 | IS43R16160B-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,252 | ||
 | IS43R16160B-5TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 891 | ||
 | IS43R16160B-5TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 224 |
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