 | | IS45S32800L-7TLA1-TR | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 86 | |
 | N/A | IS46DR16160B-25DBLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 108 | |
 | N/A | IS46DR16160B-25DBLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,256 | |
 | N/A | IS46DR16160B-25DBLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 649 | |
 | N/A | IS46DR16160B-25DBLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,560 | |
 | N/A | IS46DR16160B-3DBLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 437 | |
 | N/A | IS46DR16160B-3DBLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 166 | |
 | N/A | IS46DR16160B-3DBLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,440 | |
 | N/A | IS46DR16160B-3DBLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 708 | |
 | | IS46DR16320C-3DBA2 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 121 | |
 | | IS46DR16320D-25DBA2 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,481 | |
 | | IS46DR16320E-25DBLA1 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 669 | |
 | | IS46DR16320E-25DBLA1-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 453 | |
 | | IS46DR16320E-25DBLA2 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 363 | |
 | | IS46DR16320E-25DBLA2-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 447 | |
 | | IS46DR16320E-3DBLA1 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,028 | |
 | | IS46DR16320E-3DBLA1-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 695 | |
 | | IS46DR16320E-3DBLA2 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,542 | |
 | | IS46DR16320E-3DBLA2-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 865 | |
 | | IS46R16160D-5TLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 738 | |