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Flash Memory

Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.

Part Search

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Total Products: 400
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
N/A
F59L2G81KA-25BIG2NESMT2Gb NAND Flash Ind.Flash MemoryBGA-632.7V ~ 3.6V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
322
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QUOTE
N/A
F59L2G81KA-25TG2NESMT2Gb NAND FlashFlash MemoryTSOPI-482.7V ~ 3.6V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
136
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N/A
F59L2G81KA-25TIAG2NESMT2Gb NAND Flash Auto.Flash MemoryTSOPI-482.7V ~ 3.6V-40°C – 105°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
48-TSOPI
58
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QUOTE
N/A
F59L2G81KA-25TIG2NESMT2Gb NAND Flash Ind.Flash MemoryTSOPI-482.7V ~ 3.6V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
450
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QUOTE
N/A
F59L2G81XA-25BCG2BESMT2Gb NAND FlashFlash MemoryBGA-672.7V ~ 3.6V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
67-BGA
576
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QUOTE
N/A
F59L2G81XA-25BCIG2BESMT2Gb NAND Flash Ind.Flash MemoryBGA-672.7V ~ 3.6V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
67-BGA
447
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QUOTE
N/A
F59L2G81XA-25BG2BESMT2Gb NAND FlashFlash MemoryBGA-632.7V ~ 3.6V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
63-BGA
523
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QUOTE
N/A
F59L2G81XA-25BIG2BESMT2Gb NAND Flash Ind.Flash MemoryBGA-632.7V ~ 3.6V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
496
GET A
QUOTE
N/A
F59L2G81XA-25TG2BESMT2Gb NAND FlashFlash MemoryTSOPI-482.7V ~ 3.6V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
273
GET A
QUOTE
N/A
F59L2G81XA-25TIG2BESMT2Gb NAND Flash Ind.Flash MemoryTSOPI-482.7V ~ 3.6V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
1,705
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QUOTE
N/AN/AF59L4G161KA-25BCG2RESMT4Gb NAND FlashFlash MemoryBGA-672.7V ~ 3.6V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
67-BGA
1,919
GET A
QUOTE
N/AN/AF59L4G161KA-25BCIG2RESMT4Gb NAND Flash Ind.Flash MemoryBGA-672.7V ~ 3.6V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
256M x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
67-BGA
48
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QUOTE
N/A
F59L4G81KA-25BCG2RESMT4Gb NAND FlashFlash MemoryBGA-672.7V ~ 3.6V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
67-BGA
368
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QUOTE
N/A
F59L4G81KA-25BCIAG2RESMT4Gb NAND Flash Auto.Flash MemoryBGA-672.7V ~ 3.6V-40°C – 105°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
67-BGA
1,217
GET A
QUOTE
N/A
F59L4G81KA-25BCIG2RESMT4Gb NAND Flash Ind.Flash MemoryBGA-672.7V ~ 3.6V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
67-BGA
1,052
GET A
QUOTE
N/A
F59L4G81KA-25BG2RESMT4Gb NAND FlashFlash MemoryBGA-632.7V ~ 3.6V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
63-BGA
1,016
GET A
QUOTE
N/A
F59L4G81KA-25BIAG2RESMT4Gb NAND Flash Auto.Flash MemoryBGA-632.7V ~ 3.6V-40°C – 105°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
63-BGA
565
GET A
QUOTE
N/A
F59L4G81KA-25BIG2RESMT4Gb NAND Flash Ind.Flash MemoryBGA-632.7V ~ 3.6V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
375
GET A
QUOTE
N/A
F59L4G81KA-25TG2RESMT4Gb NAND FlashFlash MemoryTSOPI-482.7V ~ 3.6V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
1,250
GET A
QUOTE
N/A
F59L4G81KA-25TIAG2RESMT4Gb NAND Flash Auto.Flash MemoryTSOPI-482.7V ~ 3.6V-40°C – 105°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
400 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
48-TSOPI
1,522
GET A
QUOTE

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About Flash Memory

Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.

Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.

Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.

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If you can’t find the parts you’re looking for in our database, don’t worry! We’re here to help. Simply fill out the form below with the part number you need and your contact information, and we’ll locate it for you. If you prefer to speak to someone directly, our sales team is available at 949.783.7300.

























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