Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.
Flash Memory
Total Products: 1,408
| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
| N/A | F59L1G81LB-25BCIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 67-BGA | 1,067 | ||
| N/A | F59L1G81LB-25BG2M | ESMT | 1Gb NAND Flash | Flash Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Commercial Qualification: N/A Packaging: 63-BGA | 873 | ||
| N/A | F59L1G81LB-25BIAG2M | ESMT | 1Gb NAND Flash Auto. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 105°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Automotive Qualification: AEC-Q100 Packaging: 63-BGA | 851 | ||
| N/A | F59L1G81LB-25BIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 63-BGA | 134 | ||
| N/A | F59L1G81LB-25TG2M | ESMT | 1Gb NAND Flash | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Commercial Qualification: N/A Packaging: 48-TSOPI | 868 | ||
| N/A | F59L1G81LB-25TIAG2M | ESMT | 1Gb NAND Flash Auto. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 105°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Automotive Qualification: AEC-Q100 Packaging: 48-TSOPI | 1,052 | ||
| N/A | F59L1G81LB-25TIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 48-TSOPI | 548 | ||
| N/A | F59L1G81LB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Flash Memory | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 2.7V ~ 3.6V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: NAND Flash Technology: SLC NAND Flash Memory Organization: 1G x 8 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 1,295 | ||
| N/A | F59L1G81MB-25BCG2M | ESMT | 1Gb NAND Flash | Flash Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Commercial Qualification: N/A Packaging: 67-BGA | 47 | ||
| N/A | F59L1G81MB-25BCIAG2M | ESMT | 1Gb NAND Flash Auto. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 105°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Automotive Qualification: AEC-Q100 Packaging: 67-BGA | 16 | ||
| N/A | F59L1G81MB-25BCIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 67-BGA | 771 | ||
| N/A | F59L1G81MB-25BG2M | ESMT | 1Gb NAND Flash | Flash Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Commercial Qualification: N/A Packaging: 63-BGA | 247 | ||
| N/A | F59L1G81MB-25BIAG2M | ESMT | 1Gb NAND Flash Auto. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 105°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Automotive Qualification: AEC-Q100 Packaging: 63-BGA | 1,018 | ||
| N/A | F59L1G81MB-25BIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 63-BGA | 276 | ||
| N/A | F59L1G81MB-25TG2M | ESMT | 1Gb NAND Flash | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Commercial Qualification: N/A Packaging: 48-TSOPI | 707 | ||
| N/A | F59L1G81MB-25TIAG2M | ESMT | 1Gb NAND Flash Auto. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 105°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Automotive Qualification: AEC-Q100 Packaging: 48-TSOPI | 813 | ||
| N/A | F59L1G81MB-25TIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 48-TSOPI | 1,119 | ||
| N/A | F59L1G81MB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Flash Memory | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 2.5V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 350 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: NAND Flash Technology: SLC NAND Flash Memory Organization: 128M x 8 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 20 | ||
| N/A | F59L2G81KA-25BCG2N | ESMT | 2Gb NAND Flash | Flash Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Memory Size: 2 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 400 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel Grade: Commercial Qualification: N/A Packaging: 67-BGA | 638 | ||
| N/A | F59L2G81KA-25BCIAG2N | ESMT | 2Gb NAND Flash Auto. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 105°C | Memory Size: 2 Gbit Clock Frequency: N/A Write Cycle Time Word Page: 400 µs Access Time: 20 ns Memory Type: Non-Volatile Memory Format: FLASH Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel Grade: Automotive Qualification: AEC-Q100 Packaging: 67-BGA | 488 |
About Flash Memory
Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.
Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.
Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.
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