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Flash Memory

Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.

Part Search

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Total Products: 1,408
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
MT29F64G08AKCCBH2-10Z:CN/AMT29F64G08AKCCBH2-10Z:CMicron Technology Inc.IC FLASH 64GBIT PARALLEL 100TBGAFlash Memory100-TBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
100 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
100-TBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
60
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MT29F64G08AMABAC5-IT:BN/AMT29F64G08AMABAC5-IT:BMicron Technology Inc.IC FLASH 64GBIT PARALLEL 52VLGAFlash Memory52-VLGA (18x14)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
52-VLGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,088
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MT29F64G08AMCBBH2-12:BN/AMT29F64G08AMCBBH2-12:BMicron Technology Inc.IC FLASH 64GBIT PARALLEL 100TBGAFlash Memory100-TBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
100-TBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
421
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QUOTE
MT29F64G08AMCBBH2-12:B TRN/AMT29F64G08AMCBBH2-12:B TRMicron Technology Inc.IC FLASH 64GBIT PARALLEL 100TBGAFlash Memory100-TBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
100-TBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
75
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QUOTE
MT29F64G08AMCBBH2-12IT:BN/AMT29F64G08AMCBBH2-12IT:BMicron Technology Inc.IC FLASH 64GBIT PARALLEL 100TBGAFlash Memory100-TBGA (12x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
100-TBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
469
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QUOTE
N/AN/AMT29F64G08CBAAAL74A3WC1PMicron Technology Inc.IC FLASH 64GBIT PARALLEL DIEFlash MemoryDie2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
Die
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
911
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QUOTE
MT29F64G08CBAAAWP-IT:AN/AMT29F64G08CBAAAWP-IT:AMicron Technology Inc.IC FLASH 64GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
679
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QUOTE
MT29F64G08CBAAAWP-IT:A TRN/AMT29F64G08CBAAAWP-IT:A TRMicron Technology Inc.IC FLASH 64GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
271
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QUOTE
MT29F64G08CBAAAWP-ITZ:A TRN/AMT29F64G08CBAAAWP-ITZ:A TRMicron Technology Inc.IC FLASH 64GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,073
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QUOTE
MT29F64G08CBAAAWP-Z:AN/AMT29F64G08CBAAAWP-Z:AMicron Technology Inc.IC FLASH 64GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,158
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QUOTE
MT29F64G08CBAAAWP-Z:A TRN/AMT29F64G08CBAAAWP-Z:A TRMicron Technology Inc.IC FLASH 64GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,280
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QUOTE
MT29F64G08CBAAAWP:AN/AMT29F64G08CBAAAWP:AMicron Technology Inc.IC FLASH 64GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
134
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QUOTE
MT29F64G08CBAAAWP:A TRN/AMT29F64G08CBAAAWP:A TRMicron Technology Inc.IC FLASH 64GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,058
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QUOTE
MT29F64G08CBAABWP-12Z:AN/AMT29F64G08CBAABWP-12Z:AMicron Technology Inc.IC FLASH 64GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
359
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QUOTE
MT29F64G08CBAABWP-12Z:A TRN/AMT29F64G08CBAABWP-12Z:A TRMicron Technology Inc.IC FLASH 64GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
200
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QUOTE
N/AN/AMT29F64G08CBABAL84A3WC1Micron Technology Inc.IC FLASH 64GBIT PARALLEL DIEFlash MemoryDie2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
Die
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,675
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QUOTE
N/AN/AMT29F64G08CBABAL84A3WC1-MMicron Technology Inc.IC FLASH 64GBIT PARALLEL DIEFlash MemoryDie2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
Die
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
662
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QUOTE
MT29F64G08CBABAWP-IT:BN/AMT29F64G08CBABAWP-IT:BMicron Technology Inc.IC FLASH 64GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
361
GET A
QUOTE
MT29F64G08CBABAWP-IT:B TRN/AMT29F64G08CBABAWP-IT:B TRMicron Technology Inc.IC FLASH 64GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,280
GET A
QUOTE
MT29F64G08CBABAWP-M:BN/AMT29F64G08CBABAWP-M:BMicron Technology Inc.IC FLASH 64GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,468
GET A
QUOTE

Featured Brands

About Flash Memory

Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.

Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.

Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.

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