Flash Memory

Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.

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Total Products: 1,408
ImageData
Sheet
Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp
Additional SpecificationsQtyGet A
Quote
MTFC8GLWDQ-3M AIT ZN/AMTFC8GLWDQ-3M AIT ZMicron Technology Inc.IC FLASH 64GBIT MMC 100LBGAFlash Memory100-LBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
MMC
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
665
MTFC8GLWDQ-3M AIT Z TRN/AMTFC8GLWDQ-3M AIT Z TRMicron Technology Inc.IC FLASH 64GBIT MMC 100LBGAFlash Memory100-LBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
MMC
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
582
MTFC8GLXEA-WTN/AMTFC8GLXEA-WTMicron Technology Inc.IC FLASH 64GBIT MMC 153WFBGAFlash Memory153-WFBGA (11.5x13)2.7V ~ 3.6V-25°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
MMC
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-WFBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
442
MTFC8GLXEA-WT TRN/AMTFC8GLXEA-WT TRMicron Technology Inc.IC FLASH 64GBIT MMC 153WFBGAFlash Memory153-WFBGA (11.5x13)2.7V ~ 3.6V-25°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
MMC
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-WFBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
304
N/AN/AMTFC8GLZDM-1M WTMicron Technology Inc.IC FLASH 64GBIT MMC 153TFBGAFlash Memory153-TFBGA (11.5x13)2.7V ~ 3.6V-25°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
MMC
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-TFBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
981
N2M400FDB311A3CEN/AN2M400FDB311A3CEMicron Technology Inc.IC FLSH 32GBIT MMC 52MHZ 100LBGAFlash Memory100-LBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
52 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
MMC
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,427
N/AN/AN2M400FDB311A3CF TRMicron Technology Inc.IC FLASH 32GBIT MMC 52MHZFlash MemoryN/A2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
52 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
MMC
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
N/A
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,768
N/AN/AN2M400GDB321A3CEMicron Technology Inc.IC FLASH 64GBIT MMC 52MHZFlash MemoryN/A2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
52 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
MMC
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
N/A
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,290
N/AN/AN2M400GDB321A3CF TRMicron Technology Inc.IC FLASH 64GBIT MMC 52MHZFlash MemoryN/A2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
52 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
MMC
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
N/A
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,606
N2M400JDB341A3CFN/AN2M400JDB341A3CFMicron Technology Inc.IC FLASH 256GBIT MMC 100LBGAFlash Memory100-LBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
52 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
MMC
Memory Organization:
32G x 8
Memory Size:
256 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,236
NAND128W3A0AN6NAND128W3A0AN6STMicroelectronicsIC FLASH 128MBIT PARALLEL 48TSOPFlash Memory48-TSOP2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
50 ns
1,990
NAND128W3A0AN6ENAND128W3A0AN6ESTMicroelectronicsIC FLASH 128MBIT PARALLEL 48TSOPFlash Memory48-TSOP2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
50 ns
638
NAND128W3A0AN6FNAND128W3A0AN6FSTMicroelectronicsIC FLASH 128MBIT PARALLEL 48TSOPFlash Memory48-TSOP2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
50 ns
942
NAND128W3A0BN6EN/ANAND128W3A0BN6EMicron Technology Inc.IC FLASH 128MBIT PARALLEL 48TSOPFlash Memory48-TSOP2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
50 ns
309
NAND128W3A0BN6F TRN/ANAND128W3A0BN6F TRMicron Technology Inc.IC FLASH 128MBIT PARALLEL 48TSOPFlash Memory48-TSOP2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
50 ns
494
NAND128W3A2BN6EN/ANAND128W3A2BN6EMicron Technology Inc.IC FLASH 128MBIT PARALLEL 48TSOPFlash Memory48-TSOP2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
50 ns
501
NAND128W3A2BN6F TRN/ANAND128W3A2BN6F TRMicron Technology Inc.IC FLASH 128MBIT PARALLEL 48TSOPFlash Memory48-TSOP2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
50 ns
1,523
NAND128W3A2BNXEN/ANAND128W3A2BNXEMicron Technology Inc.IC FLASH 128MBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
50 ns
267
NAND128W3AABN6EN/ANAND128W3AABN6EMicron Technology Inc.IC FLASH 128MBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
50 ns
992
NAND128W3AABN6F TRN/ANAND128W3AABN6F TRMicron Technology Inc.IC FLASH 128MBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
50 ns
830

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About Flash Memory

Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.

Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.

Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.

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