Flash Memory

Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.

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Total Products: 1,408
ImageData
Sheet
Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp
Additional SpecificationsQtyGet A
Quote
N/AEN29LV320CT-70TIP2YESMT32Mb Parallel NOR Flash Ind.Flash Memory48-TSOP (Type 1)2.7V ~ 3.6V-40°C – 85°C
Memory Size:
32 Mbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
15 µs
Access Time:
70 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NOR Flash
Memory Organization:
4M x 8 / 2M x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
48-TSOP I
622
N/AEN29LV800DB-70BIP2AESMT8Mb Parallel NOR Flash Ind.Flash Memory48-TFBGA (6x8mm)2.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Mbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
8 µs
Access Time:
70 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NOR Flash
Memory Organization:
1M x 8 / 512K x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
48-TFBGA
904
N/AEN29LV800DB-70NIP2AESMT8Mb Parallel NOR Flash Ind.Flash Memory48-WFBGA (4x6mm)2.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Mbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
8 µs
Access Time:
70 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NOR Flash
Memory Organization:
1M x 8 / 512K x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
48-WFBGA
281
N/AEN29LV800DB-70TIP2AESMT8Mb Parallel NOR Flash Ind.Flash Memory48-TSOP (Type 1)2.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Mbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
8 µs
Access Time:
70 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NOR Flash
Memory Organization:
1M x 8 / 512K x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
48-TSOP I
304
N/AEN29LV800DT-70BIP2AESMT8Mb Parallel NOR Flash Ind.Flash Memory48-TFBGA (6x8mm)2.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Mbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
8 µs
Access Time:
70 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NOR Flash
Memory Organization:
1M x 8 / 512K x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
48-TFBGA
240
N/AEN29LV800DT-70NIP2AESMT8Mb Parallel NOR Flash Ind.Flash Memory48-WFBGA (4x6mm)2.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Mbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
8 µs
Access Time:
70 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NOR Flash
Memory Organization:
1M x 8 / 512K x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
48-WFBGA
769
N/AEN29LV800DT-70TIP2AESMT8Mb Parallel NOR Flash Ind.Flash Memory48-TSOP (Type 1)2.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Mbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
8 µs
Access Time:
70 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NOR Flash
Memory Organization:
1M x 8 / 512K x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
48-TSOP I
1,864
N/AEN35QX512A-104FIP(2S)ESMT512Mb SPI NOR Flash Ind.Flash Memory16-pin SOP 300mil2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
16-pin SOP 300mil
1,774
N/AEN35QX512A-104FIP(2SC)ESMT512Mb SPI NOR Flash Ind.Flash Memory16-pin SOP 300mil2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
16-pin SOP 300mil
1,059
N/AEN35QX512A-104HIP(2S)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin SOP 200mil2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin SOP 200mil
970
N/AEN35QX512A-104HIP(2SC)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin SOP 200mil2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin SOP 200mil
906
N/AEN35QX512A-104WIP(2S)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin WSON 5x6mm2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin WSON 5x6mm
58
N/AEN35QX512A-104WIP(2SC)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin WSON 5x6mm2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin WSON 5x6mm
12
N/AEN35QX512A-104YIP(2S)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin WSON 8x6mm2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin WSON 8x6mm
1,496
N/AEN35QX512A-104YIP(2SC)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin WSON 8x6mm2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin WSON 8x6mm
951
N/AEN35QX512A-133FIP(2SC)ESMT512Mb SPI NOR Flash Ind.Flash Memory16-pin SOP 300mil2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
133 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
16-pin SOP 300mil
1,269
N/AEN35QX512A-133HIP(2SC)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin SOP 200mil2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
133 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin SOP 200mil
718
N/AEN35QX512A-133WIP(2SC)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin WSON 5x6mm2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
133 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin WSON 5x6mm
358
N/AEN35QX512A-133YIP(2SC)ESMT512Mb SPI NOR Flash Ind.Flash Memory8-pin WSON 8x6mm2.5V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
133 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
64M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
8-pin WSON 8x6mm
61
N/AEN35QXR128A-104FIP(2XC)ESMT128Mb SPI NOR Flash Ind.Flash Memory16-pin SOP 300mil2.5V-40°C – 85°C
Memory Size:
128 Mbit
Clock Frequency:
104 MHz
Write Cycle Time Word Page:
500 µs
Access Time:
8 ns
Memory Type:
Non-Volatile
Memory Format:
DRAM
Technology:
SPI NOR Flash
Memory Organization:
16M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
16-pin SOP 300mil
1,324

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About Flash Memory

Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.

Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.

Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.

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