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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | N/A | AS4C16M16SA-7BCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,480 | |
 | N/A | AS4C16M16SA-7BCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 36 | |
 | N/A | AS4C16M16SA-7TCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,201 | |
 | N/A | AS4C16M16SA-7TCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,288 | |
 | N/A | AS4C16M16SB-6BIN | Alliance Memory, Inc. | IC DRAM 256MBIT LVTTL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 462 | |
 | N/A | AS4C16M16SB-6BINTR | Alliance Memory, Inc. | IC DRAM 256MBIT LVTTL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 156 | |
 | N/A | AS4C16M16SB-6TIN | Alliance Memory, Inc. | IC DRAM 256MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 130 | |
 | N/A | AS4C16M16SB-6TINTR | Alliance Memory, Inc. | IC DRAM 256MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,384 | |
 | N/A | AS4C16M16SB-7TCN | Alliance Memory, Inc. | IC DRAM 256MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 311 | |
 | N/A | AS4C16M16SB-7TCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,577 | |
 | AS4C16M32MD1B-5BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 90FBGA | DRAM Memory | 90-FBGA (8x13) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVCMOS Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 222 | ||
 | AS4C16M32MD1B-5BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 90FBGA | DRAM Memory | 90-FBGA (8x13) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVCMOS Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 503 | ||
 | N/A | AS4C16M32MSB-6BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 90FBGA | DRAM Memory | 90-FBGA (8x13) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 10 | |
 | N/A | AS4C16M32MSB-6BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 90FBGA | DRAM Memory | 90-FBGA (8x13) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 17 | |
 | N/A | AS4C16M32SB-6BCN | Alliance Memory, Inc. | SDR, 512MB, 16M X 32, 3.3V, 54-B | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 376 | |
 | N/A | AS4C16M32SB-6BCNTR | Alliance Memory, Inc. | SDR, 512MB, 16M X 32, 3.3V, 54-B | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 778 | |
 | N/A | AS4C16M32SC-7TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 17 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 980 | |
 | N/A | AS4C16M32SC-7TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 17 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 100 | |
 | AS4C1G32MD4V-046BIN | Alliance Memory, Inc. | IC DRAM 32GBIT LVSTLE 200FBGA | DRAM Memory | 200-FBGA (10x15) | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 4.266 GHz Grade: Automotive Memory Format: DRAM Memory Interface: LVSTLE_06 Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-VFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 266 | ||
 | N/A | AS4C2G16D4-62BCN | Alliance Memory, Inc. | DDR4, 32GB, 2G X 16, 1.2V, 96-BA | DRAM Memory | 96-FBGA (7.5x13) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Access Time: 13.75 ns Clock Frequency: 1.6 GHz Grade: Extended / Automotive-like Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2G x 16 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 96-TFBGA Qualification: N/A Technology: SDRAM - DDR4 Write Cycle Time Word Page: N/A | 1,067 |
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