 | N/A | AS4C32M16D3-12BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 96FBGA | DRAM Memory | 96-FBGA (8x13) | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 516 | |
 | | AS4C32M16D3L-12BCN | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 96FBGA | DRAM Memory | 96-FBGA (8x13) | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 886 | |
 | N/A | AS4C32M16D3L-12BCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 96FBGA | DRAM Memory | 96-FBGA (8x13) | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 354 | |
 | | AS4C32M16D3L-12BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 96FBGA | DRAM Memory | 96-FBGA (8x13) | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 424 | |
 | N/A | AS4C32M16D3L-12BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 96FBGA | DRAM Memory | 96-FBGA (8x13) | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 1,030 | |
| N/A | | AS4C32M16MD1B-5BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x9) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 873 | |
| N/A | | AS4C32M16MD1B-5BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x9) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,575 | |
 | N/A | AS4C32M16SA-7BCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54FBGA | DRAM Memory | 54-FBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 2 ns | 962 | |
 | N/A | AS4C32M16SA-7BCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54FBGA | DRAM Memory | 54-FBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 2 ns | 859 | |
 | N/A | AS4C32M16SA-7BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54FBGA | DRAM Memory | 54-FBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 2 ns | 978 | |
 | N/A | AS4C32M16SA-7BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54FBGA | DRAM Memory | 54-FBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 2 ns | 156 | |
 | N/A | AS4C32M16SA-7TCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 946 | |
 | N/A | AS4C32M16SA-7TCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 483 | |
 | N/A | AS4C32M16SA-7TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 1,194 | |
 | N/A | AS4C32M16SA-7TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 218 | |
 | N/A | AS4C32M16SB-6TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,090 | |
 | N/A | AS4C32M16SB-6TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,307 | |
 | N/A | AS4C32M16SB-7BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54FBGA | DRAM Memory | 54-FBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 14 ns | 1,661 | |
 | N/A | AS4C32M16SB-7BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54FBGA | DRAM Memory | 54-FBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 14 ns | 49 | |
 | N/A | AS4C32M16SB-7TCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 334 | |